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One-step sintering of SiGe thermoelectric conversion unit and its electrodes

Published online by Cambridge University Press:  31 January 2011

Jun-Shan Lin  and
Yoshinari Miyamoto
Jun-Shan Lin
Affiliation:
Joining and Welding Research Institute, Osaka University, 11–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
Yoshinari Miyamoto
Affiliation:
Joining and Welding Research Institute, Osaka University, 11–1, Mihogaoka, Ibaraki, Osaka 567–0047, Japan
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Abstract

Dense p-type and n-type SiGe thermoelectric conversion units were fabricated with a double-layer electrode of W/TiB2 or W/MoSi2 by using glass encapsulation hot-isostatic-pressing process. The TiB2 and MoSi2 layers were used to prevent the chemical reaction between the tungsten and SiGe materials. Si3N4 ceramic particles were added into the electrode materials to reduce the mismatch of the thermal expansion between the electrode and the SiGe. Finite element analysis showed that the addition of 40 vol% Si3N4 into the TiB2 layer and 55 vol% Si3N4 into the MoSi2 layer reduced the thermal residual stress to a much lower value than the strength of individual layer. Sintered units had electrical resistivities of (1.5–2.0) × 10−3 Ω cm in the SiGe zone and 10−4 Ω cm in the electrodes. The comparison of the thermoelectric properties of the SiGe sintered with and without electrodes confirmed that the electrodes did not deteriorate the Seebeck coefficient of the SiGe alloys.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 3 , March 2000 , pp. 647 - 652
Copyright
Copyright © Materials Research Society 2000

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