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Porous reaction-sintered AlN tapes for high-performance microelectronics application

Published online by Cambridge University Press:  31 January 2011

F. Y. C. Boey ,
A. I. Y. Tok  and
W. J. Clegg
F. Y. C. Boey
Affiliation:
Nanyang Technological University, School of Materials Engineering, Nanyang Avenue, Singapore 639798, Singapore
A. I. Y. Tok
Affiliation:
Nanyang Technological University, School of Materials Engineering, Nanyang Avenue, Singapore 639798, Singapore
W. J. Clegg
Affiliation:
University of Cambridge, Department of Materials Science & Metallurgy, New Museums Site, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
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Abstract

A novel approach was undertaken in producing porous AlN microelectronics tapes with high thermal conductivity and low dielectric constant. This method involved polymer microspherical powders used as a sacrificial mold to introduce controlled porosity into the green tapes during pyrolysis. The Al2O3-rich porous green tapes were then reaction sintered at 1680 °C for 12 h to create porous AlN tapes. This work builds upon a previously developed novel reaction sintering process that densified and converted Al2O3-rich tapes (Al2O3–20 wt% AlN–5 wt% Y2O3) to AlN tapes at a relatively low sintering temperature of 1680 °C. The sintering behavior of the porous tapes was investigated, and the effects of the microsphere particle size and volume addition were studied. The microspheres successfully contributed to the significant reduction of tape density by porosity, and this contributed to lowering its dielectric constant. Dielectric constants of the AlN tapes were reduced to about 6.8 to 7.7 while thermal conductivity values were reasonable at about 46 to 60 W/mK. Coefficient of thermal expansion (CTE) values showed a linear trend according to phase composition, with the porous AlN tapes exhibiting CTE values of 4.4 × 10−6 to 4.8 × 10−6/°C, showing good CTE compatibility with silicon at 4.0 × 10−6/°C. The added porosity did not significantly affect the CTE values.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 306 - 314
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1.Schwartz, B., Am. Ceram. Soc. Bull. 65, 1032 (1986).Google Scholar
2.Blum, J.B. and Cannon, W.R., Adv. Ceram., (1986), American Ceramic Society, Columbus, OH.Google Scholar
3.Wirth, D., Engineered Materials Handbook (ASTM International, 1991), Vol. 4, pp. 1107–1111.Google Scholar
4.Kraft, E.H., Materials and Designs for Advanced MLC Packages, (Am. Inst. Phys., New York, 1986), pp. 255–266.Google Scholar
5.Kellerman, D.W., in Hollow and Solid Spheres and Micro-spheres—Science and Technology Associated with Their Fabrication and Application, edited by Berg, M., Bernat, T., Wilcox, D.L. Sr., Cochran, J.K. Jr., and Kellerman, D. (Mater. Res. Soc. Symp. Proc. 372, Pittsburgh, PA, 1995), pp. 239–245.Google Scholar
6.Schwartz, B., Am. Ceram. Soc. Bull. 65, 1032 (1986).Google Scholar
7.Haining, F.W. and Herbaugh, D.G., IBM Technical Disclosure Bulletin, 22(5) (1979).Google Scholar
8.Japp, R.M. and Papathomas, K.I., in Hollow and Solid Spheres and Microspheres—Science and Technology Associated with Their Fabrication and Application, edited by Berg, M., Bernat, T., Wilcox, D.L. Sr., Cochran, J.K. Jr., and Kellerman, D. (Mater. Res. Soc. Symp. Proc. 372, Pittsburgh, PA, 1995), pp. 221–229.Google Scholar
9.Kellerman, D., U.S. Patent No. 4 994302 (1991).Google Scholar
10.Liu, J.G. and Wilcox, D., in Advances in Porous Materials, edited by Komavneni, S., Smith, D.M., and Beck, J.S. (Mater. Res. Soc. Symp. Proc., 371, Pittsburgh, PA, 1995), pp. 231–237.Google Scholar
11.Plummer, J.F., Encyclopaedia of Polymer Science and Engineering, 2nd ed. (Wiley-Interscience, New York, 1987), Vol. 9, pp. 788–795.Google Scholar
12.Jaeckel, M. and Smigilski, H., U.S. Patent No. 4 917857 (1990).Google Scholar
13.Tok, A.I.Y., Boey, F.Y.C., and Khor, K.A., Processing and Fabrication of Advanced Materials VII, edited by Srivatsan, T.S. and Khor, K.A. (TMS, Warrendale, PA, 1998), pp. 451–462.Google Scholar
14.Shugg, W.T., Handbook of Electrical and Electronic Insulating Materials, 2nd ed. (IEEE Press, 1995).CrossRefGoogle Scholar
15.Disson, J.P. and Bachelard, R., Ind. Ceram. 896, 602 (1991).Google Scholar
16.Chen, C.F., Perisse, M.E., and Ramires, A.F., J. Mater. Sci. 29, 1595 (1994).CrossRefGoogle Scholar
17.Mohammed, A.A. and Corbert, S.J., in Proceedings of the 1995 International Symposium on Microelectronics, International Society of Hybrid Microelectronics (1985), pp. 218–224.Google Scholar
18.Selvaduray, G. and Sheet, L., Mater. Sci. Technol. 9, 463 (1993).CrossRefGoogle Scholar
19.Boey, F., Cao, L., Khor, K.A., and Tok, A.I.Y., Acta Mater. 49, 3117 (2000).CrossRefGoogle Scholar
20.Boey, F.Y.C., Song, X.L., Gu, Z., and Tok, A.I.Y., J. Mater. Proc. Technol. 89–90, 478 (1999).CrossRefGoogle Scholar
21.Huang, Y., Master of Engineering Thesis, Nanyang Technological University, Singapore (1999).Google Scholar
22.Tok, A.I.Y., Boey, F.Y.C., and Lam, Y.C., Mater. Sci. Eng. A280, 282 (2000).CrossRefGoogle Scholar
23.Tok, A.I.Y., Boey, F.Y.C., and Khor, K.A., J. Mater. Proc. Technol. 89–90, 508 (1999).CrossRefGoogle Scholar
24.Joshi, S.C., Lam, Y.C., Boey, F.Y.C., and Tok, A.I.Y., J. Mater. Proc. Technol. (2001, in press).Google Scholar
25.Xue, L.A. and Brook, R.J., J. Am. Ceram. Soc. 72, 341 (1989).CrossRefGoogle Scholar
26.Slamovich, E.B. and Lange, F.F., J. Am. Ceram. Soc. 75, 2498 (1992).CrossRefGoogle Scholar
27.Lee, R.R., J. Am. Ceram. Soc. 74, 2242 (1991).CrossRefGoogle Scholar
28.Chen, C.F., Perisse, M.E., Ramirez, A.F., Padture, P., and Chan, H.M., J. Mater. Sci. 29, 1595 (1994).CrossRefGoogle Scholar
29.Slack, G.A., J. Phys. Chem. Solids 34, 321 (1973).CrossRefGoogle Scholar
30.Slack, G.A., Tanzilli, R.A., Pohl, R.O., and Vandersande, J.W., J. Phys. Chem. Solids 48, 641 (1987).CrossRefGoogle Scholar
31.Harris, J.H., Youngman, R.A., and Teller, R.G., J. Mater. Res. 5, 1763 (1990).CrossRefGoogle Scholar
32.Watari, K., Ishizaki, K., and Fujikawa, T., J. Mater. Sci. 29, 262 (1992).Google Scholar
33.Thomas, A. and Muller, G., J. Eur. Ceram. Soc. 8, 11 (1991).CrossRefGoogle Scholar
34.Knotek, O., Elsing, R., and Heintz, R., Thermal Spray—Advances in Coating Technology, ed. Houck, D.L. (ASM International, 1987), pp. 181–186.Google Scholar