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Processing and microstructural characterization of sputter-deposited Ni/Ni3Al multilayered thin films

  • Evan A. Sperling (a1), Rajarshi Banerjee (a1), Gregory B. Thompson (a1), Jason P. Fain (a1), Peter M. Anderson (a1) and Hamish L. Fraser (a1)...

The crystallographic texture, orientation relationships, coherency stress, and thermal stability of sputter-deposited Ni/Ni3Al multilayered thin films were studied as a function of bilayer period (Λ) as well as processing parameters such as substrate type, deposition temperature, and prebake conditions. Deposition onto oxidized Si or single-crystal Cu(001), NaCl(001), or KBr(001) substrates near room temperature produces multilayers with a [111] crystallographic texture along the Ni/Ni3Al interface normal and a disordered face-centered cubic structure for the Ni3Al phase. In contrast, deposition at 673 K onto NaCl(001) or KBr(001) substrates that are prebaked in vacuum at 693 K produces a chemically ordered L12 structure for the Ni3Al phase and (001) epitaxial growth. X-ray diffraction measurements of (001) multilayers with equal volume fraction of Ni and Ni3Al reveals a transition from a nearly incoherent state at Λ=40 nm to a semicoherent one at Λ 40 nm. Remarkably, (001) multilayers were observed to solutionize at 1373 K, which is approximately 100 K below that predicted by the Ni–Al phase diagram.

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Journal of Materials Research
  • ISSN: 0884-2914
  • EISSN: 2044-5326
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