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Reversed domain configuration behavior in BaMgF4 ferroelectric crystal

Published online by Cambridge University Press:  03 March 2011

Huarong Zeng ,
Kiyoshi Shimamura ,
Encarnacion G. Villora ,
Shunji Takekawa  and
Kenji Kitamura
Huarong Zeng*
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Kiyoshi Shimamura
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Encarnacion G. Villora
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Shunji Takekawa
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Kenji Kitamura
Affiliation:
Optronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
*
a) Address all correspondence to this author. e-mail: zeng.Huarong@nims.go.jp
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Abstract

Piezoresponse mode atomic force microscopy was used to induce a dynamic polarization reversal process and to characterize domain configuration behavior in BaMgF4 single crystal. Triangular reversed domains observed on the polar and non-polar surface demonstrate a sideways domain wall motion mechanism prevailing in the switching process of the bulk BaMgF4 crystal. The domain wall bowing phenomenon due to the strong pinning of the crystal defects was first visualized in the piezoresponse image of the engineering domain pattern in BaMgF4 crystal.

Keywords

FerroelectricFerroelectricityScanning-probe microscopy (SPM)

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Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 1072 - 1076
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Buchter, S.C., Fan, T.Y., Liberman, V., Zayhowski, J.J., Rothschild, M., Mason, E.J., Gassanho, A., Jenssen, H.P., and Burnett, J.H.: Periodically poled BaMgF4 for ultraviolet frequency generation. Opt. Lett. 26, 1693 (2001).CrossRefGoogle ScholarPubMed
2Shimamuraa, K., Villora, E.G., Muramatsub, K., and Ichinose, N.: Advantageous growth characteristics and properties of SrAlF5 compared with BaMgF4 for UV/VUV nonlinear optical applications. J. Cryst. Growth 275, 128 (2005).CrossRefGoogle Scholar
3Zeng, H.R., Shimamura, K., Kannan, C.V., Villora, E.G., Takekawa, S., and Kitamura, K.: Isolated domain structure and its polar-surface asymmetry of ferroelectric BaMgF4 single crystals. Jpn. J. Appl. Phys. 45, 6996 (2006).CrossRefGoogle Scholar
4Lines, M.E. and Glass, A.M.: The Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, UK, 1977).Google Scholar
5Warren, W.L., Pike, G.E., Vanheusden, K., Dimos, D., Tuttle, B.A., and Robertson, J.: Defect-dipole alignment and tetragonal strain in ferroelectrics J. Appl. Phys. 79, 9250 (1996).CrossRefGoogle Scholar
6Kitamura, K., Furukawa, Y., Niwa, K., Gopalan, V., and Mitchell, T.E.: Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3. Appl. Phys. Lett. 73, 3073 (1998).CrossRefGoogle Scholar
7Gopalan, V., Mitchell, T.E., Furukawa, Y., and Kitamura, K.: The role of nonstoichiometry in 180° domain switching of LiNbO3 crystals. Appl. Phys. Lett. 72, 1981 (1998).CrossRefGoogle Scholar
8Shilo, D., Ravichandran, G., and Bhattacharya, K.: Investigation of gwin-wall structure at the nanometer scale using atomic force microscopy. Nat. Mater. 3, 453 (2004).CrossRefGoogle ScholarPubMed
9Ren, X.: Large electric-field-induced strain in ferroelectric crystal by point-defect-mediated reversible domain switching. Nat. Mater. 3, 91 (2004).CrossRefGoogle ScholarPubMed
10Zhang, L. and Ren, X.: In situ observation of reversible domain switching in aged Mn-doped BaTiO3 single crystals. Phys. Rev. B 71, 174108 (2005).CrossRefGoogle Scholar
11Agronin, A., Rosenwaks, Y., and Rosenman, G.: Direct observation of pinning centers in ferroelectrics. Appl. Phys. Lett. 88, 072911 (2006).CrossRefGoogle Scholar
12Yang, T.J., Gopalan, V., Swart, P.J., and Mohideen, U.: Direct observation of pinning and bowing of a single ferroelectric domain wall. Phys. Rev. Lett. 82, 4106 (1999).CrossRefGoogle Scholar
13Gruverman, A. and Kalinin, S.V.: Piezoresponse force microscopy and recent advances in nanoscale studies of ferroelectrics. J. Mater. Sci. 41, 107 (2006).CrossRefGoogle Scholar