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Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

  • Mark D. Losego (a1), Elizabeth A. Paisley (a2), H. Spalding Craft (a3), Peter G. Lam (a3), Edward Sachet (a3), Seiji Mita (a3), Ramon Collazo (a3), Zlatko Sitar (a3) and Jon-Paul Maria (a3)...
Abstract
Abstract

Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of MgO on GaN is demonstrated.

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This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
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a) Address all correspondence to this author. e-mail: losego@gatech.edu
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