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Selective-area growth of III-V nanowires and their applications

Published online by Cambridge University Press:  26 July 2011

Katsuhiro Tomioka ,
Keitaro Ikejiri ,
Tomotaka Tanaka ,
Junichi Motohisa ,
Shinjiroh Hara ,
Kenji Hiruma  and
Takashi Fukui
Katsuhiro Tomioka*
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan; and Japan Science and Technology Agency—Precursory Research for Embryonic Science and Technology, Kawaguchi-shi, Saitama 332-0012, Japan
Keitaro Ikejiri
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
Tomotaka Tanaka
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
Junichi Motohisa
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
Shinjiroh Hara
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
Kenji Hiruma
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
Takashi Fukui*
Affiliation:
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
*
a)Address all correspondence to these authors. e-mail: tomioka@rciqe.hokudai.ac.jp
b)e-mail: fukui@rciqe.hokudai.ac.jp
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Abstract

We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning of the vertical NWs on (111) oriented surfaces with lithographic techniques. Core-shell structures have also been achieved by controlling the growth mode during SA-MOVPE. The core-shell III-V NW-based devices such as light-emitting diodes, photovoltaic cells, and vertical surrounding-gate transistors are discussed in this article. Nanometer-scale growth also enabled the integration of III-V NWs on Si regardless of lattice mismatches. These demonstrated achievements should have broad applications in laser diodes, photodiodes, and high-electron mobility transistors with functionality on Si not made possible with conventional Si-CMOS techniques.

Keywords

III-VNanostructureVapor-phase epitaxy(VPE)
Type
Reviews
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2127 - 2141
Copyright
Copyright © Materials Research Society 2011

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Footnotes

This section of Journal of Materials Research is reserved for papers that are reviews of literature in a given area.

References

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