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Simulation studies of Sn-based perovskites with Cu back-contact for non-toxic and non-corrosive devices

Published online by Cambridge University Press:  24 June 2019

Saquib Ahmed ,
Jalen Harris ,
Jon Shaffer ,
Mohan Devgun ,
Shaestagir Chowdhury ,
Aboubakr Abdullah  and
Sankha Banerjee
Saquib Ahmed*
Affiliation:
Department of Mechanical Engineering Technology, SUNY – Buffalo State, Buffalo, New York 14222, USA
Jalen Harris
Affiliation:
Department of Mechanical Engineering, California State University – Fresno, Fresno, California 93740, USA
Jon Shaffer
Affiliation:
Department of Mechanical Engineering Technology, SUNY – Buffalo State, Buffalo, New York 14222, USA
Mohan Devgun
Affiliation:
Department of Mechanical Engineering Technology, SUNY – Buffalo State, Buffalo, New York 14222, USA
Shaestagir Chowdhury
Affiliation:
Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, USA
Aboubakr Abdullah
Affiliation:
Center for Advanced Materials, Qatar University, Doha, Qatar
Sankha Banerjee
Affiliation:
Department of Mechanical Engineering, California State University – Fresno, Fresno, California 93740, USA
*
a)Address all correspondence to this author. e-mail: ahmedsm@buffalostate.edu
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Abstract

Using general-purpose photovoltaic device model, we have simulated the operation and functionality of a working Sn perovskite/Cu2O hole transport layer (HTL)/Cu back-contact device versus a standard Pb perovskite/Spiro HTL/Ag back-contact device. The results are extremely promising in that they showcase comparable cell efficiencies, with the Sn perovskite/Cu2O HTL/Cu back-contact device showing a highest 22.9% efficiency [Jsc of 353.4 A/m2, Voc of 0.84 V, fill factor (FF) of 0.77] at 427 nm active layer thickness compared with 24.6% of the standard Pb perovskite/Spiro HTL/Ag back-contact device (Jsc of 356.8 A/m2, Voc of 0.82 V, FF of 0.84) at the same active layer thickness. Jsc, Voc, and FF kinetics reveal that the Sn perovskite/Cu2O HTL/Cu back-contact device can perform better by reducing the recombination centers both within each layer matrix and in the interfacial contacts.

Keywords

photovoltaicsimulationPb

Information

Type
Invited Paper
Information
Journal of Materials Research , Volume 34 , Issue 16 , 28 August 2019 , pp. 2789 - 2795
Copyright
Copyright © Materials Research Society 2019 

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