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Solid-phase epitaxy of ion-implanted LiNbO3 for optical waveguide fabrication

Published online by Cambridge University Press:  31 January 2011

Ch. Buchal ,
P. R. Ashley  and
B. R. Appleton
Ch. Buchal
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, Tennessee 37831
P. R. Ashley
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, Tennessee 37831
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, Tennessee 37831
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Abstract

A new technique for successfully fabricating high-quality optical waveguides in LiNbO3 is reported. A high concentration of Ti is implanted with the substrate at liquid nitrogen temperature and an amorphous, Ti-rich, nonequilibrium phase is produced in the implanted, near-surface region. Subsequent thermal annealing in water-saturated oxygen atmosphere at up to 1000°C initiates solid-phase epitaxial regrowth onto the crystalline substrate. A highquality single crystalline layer results that is rich in Ti and has excellent waveguiding properties.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 2 , April 1987 , pp. 222 - 230
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1Appleton, B. R., Beardsley, G. M., Farlow, G. C., Christie, W. H., and Ashley, P. R., J. Mater. Res. 1, 104 (1986).CrossRefGoogle Scholar
2Buchal, Ch., Appleton, B. R., Christie, W. H., and Ashley, P. R., in Defect Properties and Processing of High Technology Nonmetallic Materials, edited by Chen, Y., Kingery, W. D., and Stokes, R. J. (Materials Research Society, Pittsburgh, PA, 1986), p. 427.Google Scholar
3Hunsperger, R. G., Integrated Optics: Theory and Technology (Springer, Berlin, 1985).Google Scholar
4Holman, R. L. and Smyth, D. M., Processing of Guided Wave Optoelectronic Materials (The Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, 1984), Vol. 460.Google Scholar
5Holman, R. L. and Skinner, D. P., Opt. Eng. 24, 251 (1985).CrossRefGoogle Scholar
6Rauber, A., in Current Topics in Materials Science, edited by Kel-dis, E. (North-Holland, Amsterdam, 1978), Vol. 1, p. 481.Google Scholar
7Megaw, H. D., Acta Crystallgr. A 24, 583 (1968); H. D. Megawand C. N. W. Darlington, Acta Crystallogr. A 31, 161 (1975).Google Scholar
8Svaasand, L. O., Eriksrud, M., Nakken, G., and Grande, A. P., Cryst. Growth 22, 230 (1974).CrossRefGoogle Scholar
9Holman, R. L., Gressman, P. J., and Rovelli, J. F., Appl. Phys. Lett. 32, 280 (1978).CrossRefGoogle Scholar
10Schmidt, R. V. and Kaminow, I. P., Appl. Phys. Lett. 25, 458 (1974).Google Scholar
11Minakata, M., Saitoi, S., Shibata, M., and Miyazawa, S., J. Appl. Phys. 49, 4677 (1978); M. Fukuma, J. Noda, and H. Iwasaki, J. Appl. Phys. 49, 3693 (1978); J. Noda, J. Opt. Commun. 1, 64 (1980).CrossRefGoogle Scholar
12Canali, C., Armenise, M. N., Camera, A., Sario, M. De, Mazzoldi, P., and Celotti, G., in Processing of Guided Wave Optoelectronic Materials (The Society of Photo-Optical Instrumentation Engineers, Bel-lingham, WA, 1984), Vol. 450, p. 34.CrossRefGoogle Scholar
13Canali, C., Camera, A., Celotti, G., Mea, G. Delia, and Mozzolli, P., in Defect Properties and Processing of High-Technology Nonmetallic Materials, edited by Crawford, J. H. Jr., Chen, Y., and Sibley, W. A. (North-Holland, New York, 1984); Mater. Res. Soc. Symp. Proc. 24,459 (1984).Google Scholar
14Sweeney, K. L. and Halliburton, L. E., Appl. Phys. Lett. 43, 336 (1983).CrossRefGoogle Scholar
15Jackel, J. L., J. Opt. Commun. 3, 82 (1982); J. L. Jackel, C. E. Rice, and J. J. Veselka, Appl. Phys. Lett. 41, 607 (1982).CrossRefGoogle Scholar
16Jackel, J. L., Ramaswamy, V., and Lyman, S. P., Appl. Phys. Lett. 38, 509 (1981).Google Scholar
17Ashley, P. R. and C, W. S.. Chang, Appl. Phys. Lett. 45, 840 (1984); P. R. Ashley and W. S. C. Chang, in Integrated Optics III (The Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, 1983), Vol. 408.Google Scholar
18Address: Crystal Technology, 1035 Meadow Circle, Palo Alto, California 94303.Google Scholar
19Twigg, M. E., Maher, D. M., Holmes, R. J., Nakahara, S., and Sheng, T. T., in Ref. 2.Google Scholar
20Burns, W. K., Klein, P. H., West, E. J., and Plew, L. E., J. Appl. Phys. 50, 6175 (1979); R. J. Holmes and D. M. Smyth, J. Appl. Phys. 55, 3531 (1984).CrossRefGoogle Scholar
21Sugii, K., Fukuma, M., and Iwasaki, H., J. Mater. Sci. 13, 523 (1978); M. Minakata, S. Saito, and M. Shibata, J. Appl. Phys. 50, 3063 (1979).CrossRefGoogle Scholar
22Biersack, J. P., Nucl. Instrum. Methods 182/183, 199 (1981); J. P. Biersack and L. H. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).Google Scholar
23White, C. W., Sklad, P. S., Boatner, L. A., Farlow, G. C., McHargue, C. J., Sales, B. C., and Aziz, M. J., in Ref. 2.Google Scholar