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The study of pulsed laser deposited films from a pressed, sintered, W–C mixture at two different fluences

Published online by Cambridge University Press:  31 January 2011

Smita Ghaisas ,
R.D. Vispute ,
S.B. Ogale ,
S.M. Choudhari ,
S.M. Kanetkar ,
S.K. Kulkarni ,
S. Mahamuni ,
S. Badrinarayan  and
S.V. Ghaisas
Smita Ghaisas
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
R.D. Vispute
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
S.B. Ogale
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
S.M. Choudhari
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
S.M. Kanetkar
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
S.K. Kulkarni
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
S. Mahamuni
Affiliation:
Department of Physics, University of Poona, Pune 411007 India
S. Badrinarayan
Affiliation:
National Chemical Laboratory, Pune, India
S.V. Ghaisas
Affiliation:
Department of Electronic Science, University of Poona, Pune 411007 India
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Abstract

The reactive aspect of pulsed laser induced vaporization has been explored via synthesis of tungsten carbide films from an unreacted sintered mixture of the W–C system. Using low-angle x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), it is shown that stoichiometry and the extent of chemical compound formation in the deposited films depend upon the laser fluence. Two cases with energy density 20 J/cm2 and 40 J/cm2 are discussed and compared. An attempt has been made to illustrate the mechanism behind the reactive aspect of the deposition.

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Type
Articles
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Journal of Materials Research , Volume 7 , Issue 12 , December 1992 , pp. 3250 - 3254
Copyright
Copyright © Materials Research Society 1992

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References

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