Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-15T16:17:45.842Z Has data issue: false hasContentIssue false
  • English
  • Français

Suppression of dislocation accumulation in GaAs film on Si substrate by combination of impurity doping and selective area growth

Published online by Cambridge University Press:  31 January 2011

Tetsuya Ohashi
Tetsuya Ohashi
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., 4026 Kuji, Hitachi, 319-12, Japan
Get access

Abstract

Dislocation accumulation in gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, is examined by crystal plasticity simulation. A new approach to suppression of dislocation accumulation is proposed such that selective growth of the film and partial doping of impurities into it are combined. The results show the possibility to localize the plastic deformation near the film/substrate interface and to keep the surface region of the film almost dislocation-free. Geometry of the selectively grown film and a strategy for partial doping of impurities, which suppresses the dislocation accumulation in the surface region of the film, are considered.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 11 , November 1992 , pp. 3032 - 3038
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Heteroepitaxy on Silicon II, edited by Fan, J. C. C., Phillips, J. M., and Tsaur, B-Y. (Mater. Res. Soc. Symp. Proc. 91, Pittsburgh, PA, 1987).Google Scholar
2Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices, edited by Choi, H. K., Hull, R., Ishiwara, H., and Nemanich, R. J. (Mater. Res. Soc. Symp. Proc. 116, Pittsburgh, PA, 1988).Google Scholar
3Tachikawa, M. and Mori, H., Appl. Phys. Lett. 56, 2225 (1990).CrossRefGoogle Scholar
4Yamaguchi, M., Yamamoto, A., Tachikawa, M., Ito, Y., and Sugo, M., Appl. Phys. Lett. 53, 2293 (1988).Google Scholar
5Yamaguti, M., Sugo, M., and Itoh, Y., Appl. Phys. Lett. 54, 2568 (1989).CrossRefGoogle Scholar
6Lee, H.P., Huang, Y-H., Liu, X., Lin, H., and Smith, J.S., in Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices, edited by Choi, H. K., Hull, R., Ishiwara, H., and Nemanich, R. J., (Mater. Res. Soc. Symp. Proc. 116, Pittsburgh, PA, 1988), p. 219.Google Scholar
7Yacobi, B. G., Jagannath, C., and Zemon, S., Appl. Phys. Lett. 52, 555 (1988).CrossRefGoogle Scholar
8Boeck, J. De, Hoof, C. Van, and Deneffe, K., Jpn. J. Appl. Phys. 30, L423 (1991).Google Scholar
9Sakai, S., Kawasaki, K., and Wada, N., Jpn. J. Appl. Phys. 29, 2077 (1990).Google Scholar
10Nozawa, K. and Horikoshi, Y., Jpn. J. Appl. Phys. 29, L540 (1990).Google Scholar
11Greundlich, A., Grenet, J. C., Neu, G., and Stobl, G., Appl. Phys. Lett. 59, 3568 (1991).CrossRefGoogle Scholar
12Ohashi, T. and Honda, N., in Polycrystalline Semiconductors II, edited by Werner, J. H. and Strunk, H. P. (Springer Proceedings in Physics 54, Berlin, Heidelberg, 1991), p. 493.CrossRefGoogle Scholar
13Lingunis, E.H. and Haegel, N.M., Appl. Phys. Lett. 59, 3428 (1991).CrossRefGoogle Scholar
14Ohashi, T. and Honda, N., in Mechanical Behavior of Materials and Structures in Microelectronics, edited by Suhir, E., Cammarata, R. C., Chung, D. D. L., and Jono, M. (Mater. Res. Soc. Symp. Proc. 226, Pittsburgh, PA, 1991), p. 147.Google Scholar
15Swaminathan, V. and Copley, S. M., J. Am. Ceram. Soc. 58, 482 (1975).CrossRefGoogle Scholar
16Yonenaga, I. and Sumino, K., J. Appl. Phys. 62, 1212 (1987); 65, 85 (1989).Google Scholar
17Boivin, P., Rabier, J., and Garem, H., Philos. Mag. A61, 619, 647 (1990).Google Scholar
18Yonenaga, I. and Sumino, K., private communication.Google Scholar
19Jordan, A. S., Caruso, R., and Neida, A.R. Von, The Bell System Technical Journal 59, 593 (1980).CrossRefGoogle Scholar
20Hill, R., J. Mech. Phys. Sol. 14, 95 (1966).CrossRefGoogle Scholar
21Ohashi, T., Trans. Jpn. Inst. Met. 28, 906 (1987).CrossRefGoogle Scholar
22Semiconductors Handbook, revised ed., edited by Semiconductors Handbook Compilation Committee (Ohm-sha Publishing, Tokyo, 1977), p. 135.Google Scholar
23Encyclopedia for Physics and Chemistry, 3rd ed., edited by Tamamushi, B. (Iwanami Publishing, Tokyo, 1981), pp. 1068, 1151.Google Scholar