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TEM study of the structure and chemistry of a diamond/silicon interface

Published online by Cambridge University Press:  03 March 2011

Y. Tzou ,
J. Bruley ,
F. Ernst ,
M. Rühle  and
R. Raj
Y. Tzou
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501
J. Bruley
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, 70174 Stuttgart, Germany
F. Ernst
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, 70174 Stuttgart, Germany
M. Rühle
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, 70174 Stuttgart, Germany
R. Raj
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501
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Abstract

The interface between diamond and silicon, fabricated by growing diamond films on (001) silicon by microwave plasma assisted chemical vapor deposition (MPACVD), was characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Two types of interface morphology were identified. Type A interfaces contain an amorphous transition layer composed of silicon, carbon, and oxygen; the diamond overgrowth on this layer consists of nanocrystalline grains with random orientations. Type B interfaces consist of large diamond grains having special orientations with respect to the silicon substrate, without an obvious presence of a glassy phase and with a much lower oxygen content than type A interfaces.

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Articles
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Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1566 - 1572
Copyright
Copyright © Materials Research Society 1994

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References

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