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Thermal and mechanical properties of hybrid methylsilsesquioxane/poly(styrene-b-4-vinylpyridine) low-k dielectrics using a late porogen removal scheme

Published online by Cambridge University Press:  31 January 2011

Mu-Lung Che ,
Cheng-Ying Huang ,
Shindy Choang ,
Yu-Hen Chen  and
Jihperng Leu
Jihperng Leu*
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010
*
a)Address all correspondence to this author. e-mail: jimleu@mail.nctu.edu.tw
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Abstract

A late porogen removal scheme was used to make low-k materials (k = 2.72 to 2.02) using methylsilsesquioxane (MSQ) and a high-temperature porogen, poly(styrene-b-4-vinylpyridine) (PS-b-P4VP), to circumvent the reliability issues related to as-deposited porous dielectric. Based on the nanoindentation and Fourier transform infrared spectroscopy (FTIR) analysis, the moduli of the hybrid films were found to be higher than their porous forms, and even better than the dense MSQ film, for porogen loading below a critical level (˜69.5 vol%). This could be attributed to their enhanced degree of cross-linking in MSQ as evidenced by the network/cage structural ratios. Besides, high-temperature porogen plays different roles during the cross-linking of MSQ depending on its loadings. In this study, with immediate loading at 16.7 vol%, PS-b-P4VP can serve as plasticizer to enhance the degree of cross-linking, but at a large loading >16.7 vol%, it becomes a steric hindrance reducing the degree of cross-linking.

Keywords

DielectricPorosity
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 6 , June 2010 , pp. 1049 - 1056
Copyright
Copyright © Materials Research Society 2010

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