Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-06-04T13:52:56.727Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal stability of RuO2, BaxSr1−xTiO3/RuO2, and BaxSr1−xTiO3/Pt/Ti/SiO2on Si(100)

Published online by Cambridge University Press:  31 January 2011

T. S. Kang ,
Y. S. Kim  and
Jung Ho Je
T. S. Kang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
Y. S. Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
Jung Ho Je
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
Get access

Abstract

The thermal stability of RuO2/Si(100) films in air was studied using ex situ synchrotron x-ray scattering. The (110) textured RuO2 film showed good thermal stability due to the low surface and strain energies. However, the RuO2 films of high strain and surface energies were transformed to three-dimensional islands during annealing up to 800 °C. We also studied, during the post annealing process, the interface roughness of BaxSr1−xTiO3 (BST)/RuO2/Si(100) and BST/Pt/Ti/SiO2/Si(100) structures comparatively, using in situ synchrotron x-ray scattering. The interfaces of the BST/RuO2/Si were thermally stable up to 500 °C, and the deterioration of the interfaces above 500 °C was attributed to the crystallization of amorphous BST film. Meanwhile, the interfaces of the BST/Pt/Ti/SiO2/Si were significantly degraded even at the low temperature of 350 °C, mainly due to the formation of the Pt–Ti alloy and the Ti oxidation.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 1955 - 1961
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Yamamichi, S., et al., in Proceedings of the International Electron Devices Meeting (IEEE, New York, 1995), p. 119.Google Scholar
2.Horikawa, T., Mikami, N., Mikata, T., Tanimura, J., Kataoka, M., Sato, K., and Nunoshita, M., Jpn. J. Appl. Phys. 32, 4126 (1993).Google Scholar
3.Jeon, M.S. and Choi, D.K., J. Vac. Sci. Technol. B 15, 928 (1997).Google Scholar
4.Kawano, H., Morii, K., and Nakayama, Y., J. Appl. Phys. 73, 5141 (1993).Google Scholar
5.Bhattacharya, P., Park, K.H., and Nishioka, Y., Jpn. J. Appl. Phys. 33, 5231 (1994).Google Scholar
6.Fox, G.R., Trolier-McKinstry, S., and Krupanidhi, S.B., J. Mater. Res. 10, 1508 (1995).Google Scholar
7.Park, K.H., Kim, C.Y., Jeong, Y.W., Kwon, H.J., Kim, K.Y., Lee, J.S., and Kim, S.T., J. Mater. Res. 10, 1790 (1995).Google Scholar
8.Sakuma, T., Yamamichi, S., Matsubara, S., Yamaguchi, H., and Miyasaka, Y., Appl. Phys. Lett. 57, 2431 (1990).Google Scholar
9.Lee, W.J., Kim, Y.M., and Kim, H.G., Thin Solid Films 269, 75 (1995).CrossRefGoogle Scholar
10.Krusin-Elbaum, L. and Wittmer, M., J. Electrochem. Soc. 135, 2610 (1988).Google Scholar
11.Rao, C.N. and Subba Rao, G.V., National Bureau of Standards Report No. NSRDS-NBS49, 1974.Google Scholar
12.Kolawa, E., So, F.C.T, Pan, E.T-S., and Nicolet, M-A., Appl. Phys. Lett. 50, 854 (1987).Google Scholar
13.Grill, A., Kane, W., Viggiano, J., Brady, M., and Labowitz, R., J. Mater. Res. 7, 3260 (1992).Google Scholar
14.Bursill, L.A., Reaney, Ian M., Vijay, D.P., and Desu, S.B., J. Appl. Phys. 75, 1521 (1994).Google Scholar
15.Kondo, I., Yoneyama, T., and Takeuaka, O., J. Vac. Sci. Technol. A 10, 3436 (1992).Google Scholar
16.Hong, S.K., and Kim, H.J., J. Appl. Phys. 80, 822 (1996).Google Scholar
17.Warren, B.E., X-ray Diffraction (Addison-Wesley, Reading, MA, 1969), Chap. 13.Google Scholar
18.Tisone, T.C. and Drobek, J., J. Vac. Sci. Technol. 9, 271 (1971).Google Scholar
19.Sinha, S.K., Sirota, E.B., and Garoff, S., and Stanley, H.B., Phys. Rev. B 38, 2297 (1988).Google Scholar