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Thermal stress characteristics of two-level Al(Cu) interconnect structure

Published online by Cambridge University Press:  06 January 2012

Seung-Hyun Rhee  and
Paul S. Ho
Seung-Hyun Rhee
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC/MER, R8650, The University of Texas at Austin, Austin, Texas 78712
Paul S. Ho
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC/MER, R8650, The University of Texas at Austin, Austin, Texas 78712
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Abstract

Thermal stress characteristics of single-level and two-level Al(Cu) interconnects passivated with tetraethyl orthosilicate oxide were measured using x-ray diffraction. Thermal stresses of the second-level metal lines were deduced from the experimental data based on an analysis of the x-ray absorption in a two-level interconnect structure. The confinement effect from the substrate on the stress characteristics of metal lines at different interconnect levels was investigated. Thermal stress behavior of the second-level lines indicated that the confinement effect from the Si substrate is reduced compared to the single-level lines, resulting in reduced levels of hydrostatic and shear stresses.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 848 - 854
Copyright
Copyright © Materials Research Society 2003

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