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Ti–Si–C–N thin films grown by reactive arc evaporation from Ti3SiC2 cathodes

Published online by Cambridge University Press:  16 March 2011

Anders O. Eriksson ,
Jianqiang Zhu ,
Naureen Ghafoor ,
Jens Jensen ,
Grzegorz Greczynski ,
Mats P. Johansson ,
Jacob Sjölen ,
Magnus Odén ,
Lars Hultman  and
Johanna Rosén
Anders O. Eriksson*
Affiliation:
Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Jianqiang Zhu
Affiliation:
Nanostructured Materials, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Naureen Ghafoor
Affiliation:
Nanostructured Materials, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Jens Jensen
Affiliation:
Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Grzegorz Greczynski
Affiliation:
Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Mats P. Johansson
Affiliation:
Nanostructured Materials, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden; andSeco Tools AB, SE-737 82 Fagersta, Sweden
Jacob Sjölen
Affiliation:
Seco Tools AB, SE-737 82 Fagersta, Sweden
Magnus Odén
Affiliation:
Nanostructured Materials, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Lars Hultman
Affiliation:
Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Johanna Rosén
Affiliation:
Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
*
a)Address all correspondence to this author. e-mail: ander@ifm.liu.se
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Abstract

Ti–Si–C–N thin films were deposited onto WC-Co substrates by industrial scale arc evaporation from Ti3SiC2 compound cathodes in N2 gas. Microstructure and hardness were found to be highly dependent on the wide range of film compositions attained, comprising up to 12 at.% Si and 16 at.% C. Nonreactive deposition yielded films consisting of understoichiometric TiCx, Ti, and silicide phases with high (27 GPa) hardness. At a nitrogen pressure of 0.25–0.5 Pa, below that required for N saturation, superhard, 45–50 GPa, (Ti,Si)(C,N) films with a nanocrystalline feathered structure were formed. Films grown above 2 Pa displayed crystalline phases of more pronounced nitride character, but with C and Si segregated to grain boundaries to form weak grain boundary phases. In abundance of N, the combined presence of Si and C disturbs cubic phase growth severely and compromises the mechanical strength of the films.

Keywords

FilmHardnessPhysical vapor deposition
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 7 , 14 April 2011 , pp. 874 - 881
Copyright
Copyright © Materials Research Society 2011

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