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Uniformity and interfaces in ion-beam deposited Al/Ni multilayers

Published online by Cambridge University Press:  31 January 2011

A. S. Edelstein ,
R. K. Everett ,
J. H. Perepezko  and
M. H. da Silva Bassani
A. S. Edelstein
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5343
R. K. Everett
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5343
J. H. Perepezko
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706
M. H. da Silva Bassani
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706
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Abstract

The uniformity and reaction kinetics of ion-beam deposited Al/Ni multilayer samples with the same composition, Al81.8Ni18.2, and modulation wavelength, Λ = 20 nm, but with different total film thicknesses were investigated by x-ray diffraction and differential scanning calorimetry measurements. The total film thicknesses varied between approximately 0.5 and 2.0 μm. It was found that the interface widths were approximately 1 nm and the Ni layers are much more disordered than the Al layers. The thicker samples show an increase in disorder on a length scale comparable to Λ. In other experiments, a change was observed with increasing modulation wavelength from semicoherent interfaces with a low density of misfit dislocations to semicoherent interfaces with a high density of misfit dislocations. The reaction kinetics for forming the Al9Ni2 phase is independent of the sample thickness.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 2 , February 1997 , pp. 385 - 391
Copyright
Copyright © Materials Research Society 1997

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References

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