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Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si

Published online by Cambridge University Press:  31 January 2011

E. P. Kvam ,
D. M. Maher  and
C. J. Humphreys
E. P. Kvam
Affiliation:
Department of Materials Science and Engineering, The University, Liverpool L69 3BX, United Kingdom
D. M. Maher
Affiliation:
Department of Materials Science and Engineering, The University, Liverpool L69 3BX, United Kingdom
C. J. Humphreys
Affiliation:
Department of Materials Science and Engineering, The University, Liverpool L69 3BX, United Kingdom
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Abstract

A change in microstructure, including dislocation Burgers vector, length, and behavior, has been observed to occur when the epilayer mismatch is varied in GexSi1−x layers grown on (100) Si. At low mismatches (<1.5%), there is an orthogonal array of very long 60° misfit dislocations. At higher mismatches (>2.3%) there is an orthogonal array of short edge dislocations. At intermediate mismatches (1.5 to 2.3%) there is a mixture of 60° and edge dislocations. The nature of the microstructure has a pronounced effect on the density of threading dislocations in the epilayer, which increase by a factor of ∼60× through a relatively small range of mismatch (1.7 to 2.1%, corresponding to x ranging from 0.4 to 0.5). These morphologies are discussed in the light of recent work on the sources of misfit dislocations. While mechanisms for the introduction and propagation of dislocations at low mismatch have recently been observed and explained, the high misfit case is clearly very different; i.e., surface nucleation seems to be likely in the latter case as opposed to operation of an internal source in the former. A mechanism for edge dislocation formation is proposed.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 9 , September 1990 , pp. 1900 - 1907
Copyright
Copyright © Materials Research Society 1990

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