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Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

  • O. Slobodyan (a1), T. Smith (a1), J. Flicker (a1), S. Sandoval (a1) (a2), C. Matthews (a1) (a2), M. van Heukelom (a1), R. Kaplar (a1) and S. Atcitty (a1)...

Abstract

We report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

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Corresponding author

Address all correspondence to R. Kaplar at rjkapla@sandia.gov

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1.Millan, J., Godignon, P., Perpina, X., Perez-Tomas, A., and Rebollo, J.: A survey of wide bandgap power semiconductor devices. IEEE Trans. Power Electron. 29, 2155 (2014).
2.Tsao, J.Y., Chowdhury, S., Hollis, M.A., Jena, D., Johnson, N.M., Jones, K.A., Kaplar, R.J., Rajan, S., Van de Walle, C.G., Bellotti, E., Chua, C.L., Collazo, R., Coltrin, M.E., Cooper, J.A., Evans, K.R., Graham, S., Grotjohn, T.A., Heller, E.R., Higashiwaki, M., Islam, M.S., Juodawlkis, P.W., Khan, M.A., Koehler, A.D., Leach, J.H., Mishra, U.K., Nemanich, R.J., Pilawa-Podgurski, R.C.N., Shealy, J.B., Sitar, Z., Tadjer, M.J., Witulski, A.F., Wraback, M., and Simmons, J.A.: Ultrawide-bandgap semiconductors: research opportunities and challenges. Adv. Electron. Mater. 4, 1600501 (2018).
3.Hudgins, J.L., Simin, G.S., Santi, E., and Khan, M.A.: An assessment of wide bandgap semiconductors for power devices. IEEE Trans. Power Electron. 18, 907 (2003).
4.Baliga, B.J.: Fundamentals of Power Semiconductor Devices (Springer Sciences, New York, 2008).
5.Dickerson, J.R., Allerman, A.A., Bryant, B.N., Fischer, A.J., King, M.P., Moseley, M.W., Armstrong, A.M., Kaplar, R.J., Kizilyalli, I.C., Aktas, O., and Wierer, J.J.: Vertical GaN power diodes with a bilayer edge termination. IEEE Trans. Electron Devices 63, 419 (2016).
6.Jones, E.A., Wang, F.F., and Costinett, D.: Review of commercial GaN power devices and GaN-based converter design challenges. IEEE J. Emerging Sel. Topics Power Electron. 4, 707 (2016).
7.Kizilyalli, I.C., Edwards, A.P., Nie, H., Disney, D., and Bour, D.: High voltage vertical GaN p–n diodes with avalanche capability. IEEE Trans. Electron Devices 60, 3067 (2013)
8.Kizilyalli, I.C., Edwards, A.P., Nie, H., Bour, D., Prunty, T., and Disney, D.: 3.7 kV vertical GaN PN diodes. IEEE Electron Device Lett. 35, 247 (2014).
9.Nie, H., Diduck, Q., Alvarez, B., Edwards, A.P., Kayes, B.M., Zhang, M., Ye, G., Prunty, T., Bour, D., and Kizilyalli, I.C.: 1.5-kV and 2.2-m(ohm)-cm2 vertical GaN transistors on bulk-GaN substrates. IEEE Electron Device Lett. 35, 939 (2014).
10.Ohta, H., Kaneda, N., Horikiri, F., Narita, Y., Yoshida, T., Mishima, T., and Nakamura, T.: Vertical GaN p–n junction diodes with high breakdown voltages over 4 kV. IEEE Electron Device Lett. 36, 1180 (2015).
11.Hu, Z., Nomoto, K., Song, B., Zhu, M., Qi, M., Pan, M., Gao, X., Protasenko, V., Jena, D., and Xing, H.G.: Near unity ideality factor and Shockley-read-hall lifetime in GaN-on-GaN p–n diodes with avalanche breakdown. Appl. Phys. Lett. 107, 243501 (2015).
12.del Alamo, J.A. and Joh, J.: GaN HEMT reliability. Microelectron. Reliab. 49, 1200 (2009).
13.King, M.P., Dickerson, J.R., DasGupta, S., Marinella, M.J., Kaplar, R.J., Piedra, D., Sun, M., and Palacios, T.: Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks, in Reliability Physics Symposium (IRPS), 2015 IEEE Proceedings, Monterey, CA, USA, 2015, Start Page: IEEE. doi: 10.1109/IRPS.2015.7112689.
14.Wu, Y., Chen, C.Y., and del Alamo:, J.A. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress. J. Appl. Phys. 117, 025707 (2015).
15.Bahl, S.R., Kim, J., Fu, L., Sasikumar, A., Chatterjee, T., and Pendrakhar, S.: Application reliability validation of GaN power devices, presented at the Electron Devices Meeting (IEDM), 2016 IEEE International, San Francisco, CA, USA, 2016, doi: 10.1109/IEDM.2016.7838461.
16.Kizilyalli, I.C., Bui-Quang, P., Disney, D., Bhatia, H., and Aktas, O.: Reliability studies of vertical GaN devices based on bulk GaN substrates. Microelectron. Reliab. 55, 1654 (2015).
17.Slobodyan, O., Sandoval, S., Flicker, J., Kaplar, R.J., Matthews, C., van Heukelom, M., and Atcitty, S.: Switching reliability characterization of vertical GaN PiN diodes, presented at the Electrical Energy Storage Applications and Technology, 2017, San Diego, CA, USA, 2017.
18.Kizilyalli, I.C., Edwards, A.P., Aktas, O., Prunty, T., and Bour, D.: Vertical power p–n diodes based on bulk GaN. IEEE Trans. Electron Devices 62, 414 (2015).
19.Matthews, C., Flicker, J., Kaplar, R.J., van Heukelom, M., Atcitty, S., Kizilyalli, I.C., and Aktas, O.: Switching characterization of vertical GaN PiN diodes, presented at the Wide Bandgap Power Devices and Applications (WiPDA), 2016 IEEE 4th Workshop, Fayetteville, AR, USA, 2016, doi: 10.1109/WiPDA.2016.7799924.
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Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

  • O. Slobodyan (a1), T. Smith (a1), J. Flicker (a1), S. Sandoval (a1) (a2), C. Matthews (a1) (a2), M. van Heukelom (a1), R. Kaplar (a1) and S. Atcitty (a1)...

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