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Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Published online by Cambridge University Press:  28 September 2018

O. Slobodyan ,
T. Smith ,
J. Flicker ,
S. Sandoval ,
C. Matthews ,
M. van Heukelom ,
R. Kaplar  and
S. Atcitty
O. Slobodyan
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
T. Smith
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
J. Flicker
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
S. Sandoval
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA University of Arkansas, Fayetteville, AR 72701, USA
C. Matthews
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA University of Arkansas, Fayetteville, AR 72701, USA
M. van Heukelom
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
R. Kaplar*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
S. Atcitty
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
*
Address all correspondence to R. Kaplar at rjkapla@sandia.gov
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Abstract

We report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 4 , December 2018 , pp. 1413 - 1417
Copyright
Copyright © Materials Research Society 2018 

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References

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