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Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors

Published online by Cambridge University Press:  23 December 2015

Yu Liu ,
Kyle McElhinny ,
Olivia Alley ,
Paul G. Evans  and
Howard E. Katz
Yu Liu
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, USA
Kyle McElhinny
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI 53706, USA
Olivia Alley
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, USA
Paul G. Evans
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI 53706, USA
Howard E. Katz*
Affiliation:
Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, USA
*
Address all correspondence to Howard E. Katz athekatz@jhu.edu
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Abstract

Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.

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Type
Research Letters
Information
MRS Communications , Volume 5 , Issue 4 , December 2015 , pp. 605 - 611
Copyright
Copyright © Materials Research Society 2015 

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