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Formation of Device Quality Si/SiO2 Interfaces in a Multichamber Integrated Processing System

Published online by Cambridge University Press:  25 February 2011

S.S. Kim ,
D.V. Tsu ,
G. Lucovsky ,
G.G. Fountain  and
R.J. Markunas
S.S. Kim
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695
D.V. Tsu
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695
G. Lucovsky
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695
G.G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

This paper describes the key process steps in the low temperature, <300ºC, formation of device quality Si/SiO2 interfaces employing oxide deposition by Remote Plasma-Enhanced Chemical Vapor-Deposition (Remote PECVD). The quality of the Si/SiO2 interface correlates with the degree of surface reconstruction that is controlled by ex-situ wet cleaning and in-situ Rapid Flash Heating. Electronic properties of the MOS structure also vary with the deposited oxide thickness, independent of the initial surface quality.

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