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High-Temperature Hardness of Bulk Single-Crystal AlN

Published online by Cambridge University Press:  21 March 2011

Ichiro Yonenaga ,
Andrey Nikolaev ,
Yuriy Melnik  and
Vladimir Dmitriev
Ichiro Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Andrey Nikolaev
Affiliation:
Ioffe Institute and Crystal Growth Reserach Center, St. Petersburg 194 021, Russia
Yuriy Melnik
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, U. S. A.
Vladimir Dmitriev
Affiliation:
TDI, Inc., Gaithersburg, MD 20877, U. S. A.
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Abstract

The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 – 5 N in the temperature range 20 - 1400°C. The average hardness was measured as 17.7 GPa at room temperature, harder than GaN and InN. The fracture toughness is 0.5 MPa•m1/2. AlN exhibits the hardness higher than that of GaN in the entire temperature range investigated. Up to about 1100°C, AlN maintains its hardness and thus, a high mechanical stability for AlN at elevated temperatures is deduced.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I10.4.1
Copyright
Copyright © Materials Research Society 2002

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