Hostname: page-component-857557d7f7-9f75d Total loading time: 0 Render date: 2025-11-23T04:34:02.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Scanning Eectron Beam Annealing of Oxygen Donors in Czochralski Silicon

Published online by Cambridge University Press:  15 February 2011

C J Pollard ,
J D Speight  and
K G Barraclough
C J Pollard
Affiliation:
British Telecom Research Labs, Martlesham Heath, Suffolk, England
J D Speight
Affiliation:
British Telecom Research Labs, Martlesham Heath, Suffolk, England
K G Barraclough
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire, England
Get access

Abstract

The destruction of the oxygen donor complex in Czochralski silicon has been studied using scanning electron beam annealing in the range 550°C to 1050° C for 5s to 1000s. A two stage annealing schedule ensured a rapid rise to the target temperature and overscanning provided a uniform, non-distorting heating field. Four point probe and spreading resistance measurements showed a very rapid donor destruction rate above 650° C; between 550° C and 650°C the lower donor destruction rate allowed a study of the annealing behaviour.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 413
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Hu, S M, Appl. Phys. Lett. 31, 53 (1977)Google Scholar
2.Tan, K W, Gardner, E E, Tice, W K, Appl. Phys. Lett. 30, 175 (1977)Google Scholar
3.Kaiser, W, Phys. Rev. 105, 1751 (1957)Google Scholar
4.Kaiser, W, Frisch, H L, Reiss, H, Phys. Rev. 112, 1546 (1958)Google Scholar
5.Wruck, D, Gaworzewski, P, Phys. Stat. Sol. 56, 557 (1979)Google Scholar
6.Nakayama, H, Katsura, J, Nishino, T, Hamakawa, Y, Jap. J. Appl. Phys. 19, L547 (1980)Google Scholar
7.Tajima, M, Kishino, S, Kanamori, M, lizuka, T, J. Appl. Phys. 51, 2247 (1980)Google Scholar
8.Feher, G, Phys. Rev. 114., 1219 (1959)Google Scholar
9.Fuller, C S, Logan, R A, J. Appl. Phys. 28/12, 1427 (1957)Google Scholar
10.Pollard, C J, Glaccum, A E, Speight, J D, Proc MRS Annual Meeting, Boston 1981, p789 (Eds. Appleton, B R, Celler, G K: Elsevier Science Publishing Inc)Google Scholar
11.Schaake, H F, Baber, S C, Pinizzotto, R F, Proceedings of Fourth International Symposium on Silicon Materials Science and Technology Semiconductor Silicon 1981, p273 (Ed. Huff, H R, Kriegler, R J, Takeishi, Y) Electrochemical Society)Google Scholar