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Analysis of Proton Induced Defects in Cu(In,Ga)Se2 Thin-Film Solar Cells

Published online by Cambridge University Press:  01 February 2011

Shirou Kawakita
Affiliation:
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan Tokyo Institute of Technology, 4259 Nagatsuta-cho, Yokoyama, Kanagawa 226-8503, Japan
Mitsuru Imaizumi
Affiliation:
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
Koichi Kibe
Affiliation:
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
Shinichi Yoda
Affiliation:
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan Tokyo Institute of Technology, 4259 Nagatsuta-cho, Yokoyama, Kanagawa 226-8503, Japan
Takeshi Ohshima
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Hisayoshi Itoh
Affiliation:
Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Masafumi Yamaguchi
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, Aichi 468-8511, Japan e-mail:kawakita.shirou@jaxa.jp
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Abstract

We investigated radiation-induced defects in CIGS solar cells with a solar-cell simulator to analyze the spectral response of the irradiated cells. The damage constant of the minority-carrier diffusion length of the cells irradiated with 1 MeV protons was determined to be 3.5 ×10-5. This analysis led to the relation between the defect introduction rate and proton energy, and was obtained using the same method, as was the defect annealing rate. This result agreed well with that estimated from an analysis of changes in short-circuit current degradation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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