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The Atomic Structure of Extended Defects in GaN

Published online by Cambridge University Press:  03 September 2012

P. Ruterana  and
G. Nouet
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Bd Maréchal Juin, 14050 Caen Cedex, France. email: ruterana@lermat8.ismra.fr
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Bd Maréchal Juin, 14050 Caen Cedex, France
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Abstract

GaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and { 1120 } stacking faults, and { 1010 } inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the { 1120 } stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W5.4
Copyright
Copyright © Materials Research Society 1999

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