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Atomistic Modeling of {311} Defects and Dislocation Ribbons
Published online by Cambridge University Press: 01 February 2011
Abstract
Ab-initio calculations of dislocation and {311} defect structures in silicon were performed in order to investigate the formation energies as functions of geometry, including the effects of applied strain, with a simple model. Predictions were made concerning the size at which a {311} defect becomes less favorable than a dislocation loop, and it was shown that this is affected by applied strain.
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- Research Article
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- Copyright © Materials Research Society 2008
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