Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-23T22:15:23.259Z Has data issue: false hasContentIssue false
  • English
  • Français

Coplanar Capacitors with High Dielectric Constant BaSrTiO3 for Microwave Application

Published online by Cambridge University Press:  10 February 2011

Wei Hu ,
Vladimir Fuflyigin  and
Jim Chi
Wei Hu
Affiliation:
NZ Applied Technologies, Inc. Woburn, MA
Vladimir Fuflyigin
Affiliation:
NZ Applied Technologies, Inc. Woburn, MA
Jim Chi
Affiliation:
NZ Applied Technologies, Inc. Woburn, MA
Get access

Abstract

A coplanar structure is shown to be free of the asymmetrical I-V characteristics normally observed in MIM capacitors with BST inter-electrode dielectric. The low barrier height at the bottom interface is found to be responsible for the asymmetry, which causes increased leakage current and reduced breakdown voltage in one bias polarity. These problems can be eliminated using a coplanar structure, which has been shown elsewhere to have a very low parasitic inductance and a very high resonant frequency. However, these improvements are realized at the cost of a four times reduction of capacitance per unit area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 469
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example, Mat. Res. Soc. Symp. Proc. Vol.541, Ferroelectric Thin Films VII, (1998)Google Scholar
2. Fuflyigin, V., Li, K. K., Wang, F., Jiang, H., Liu, S., Zhao, J., Norris, P., Yip, P., in High-Temperature Superconductors and Novel Inorganic Materials, edited by Tendeloo, G. Van, (Kluwer Academic.Publ. 1999), p.279–284.Google Scholar
3. Dietz, G. W., Chumacher, M., Waser, R., Streiffer, S. K., Basceri, C., and Kingon, A. I., J. Appl. Phys., 82, 2359, 1997.Google Scholar
4. Dietz, G. W. and Waser, R., Thin Solid Films, 299, 53, 1997.Google Scholar
5. Hwang, C. S., Lee, B. T., Kang, C. S., Lee, K. H., Cho, H. J., Hideki, H., Kim, W. D., Lee, S. I., and Lee, M. Y, J. Appl. Phys., 85, 287, 1999.Google Scholar
6. Schaper, L., Ulrich, R., Nelms, D., Porter, E., Lenihan, T., and Wan, C., p. 724, Proceedings of the 1997 Electronic Component and Technology Conference. Google Scholar