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Determination of Space Shift of Si / SiGe / Si Heterojunction's Cap Layer by Grazing-angle Incidence X-ray Backiffraction Technique

Published online by Cambridge University Press:  10 February 2011

Siranush E. Bezirganyan ,
Hayk H. Bezirganyan Jr ,
Hakob P. Bezirganyan  and
Petros H. Bezirganyan Jr
Siranush E. Bezirganyan
Affiliation:
Dept. of Physics, Yerevan State University Armenia, #1, Alex Manoogian Street, Yerevan 375025, Republic of Armenia.
Hayk H. Bezirganyan Jr
Affiliation:
Dept. of Informatics and Applied Mathematics, Yerevan State University, #1, Alex Manoogian Street, Yerevan 375025, Republic of Armenia.
Hakob P. Bezirganyan
Affiliation:
Dept. of Physics, Yerevan State University Armenia, #1, Alex Manoogian Street, Yerevan 375025, Republic of Armenia.
Petros H. Bezirganyan Jr
Affiliation:
Dept. of Computer Science, State Engineering University of Armenia, #105, Terian Street, Yerevan 375009, Republic of Armenia.
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Abstract

Presented theoretical paper concerns the structure investigation of Si/SiGe/Si heterojunction bipolar device by the extremely sensitive Grazing-angle Incidence X-ray Backdiffraction (GIXB) technique. The silicon cap layer and the silicon substrate have the same value of the spacing period along the growth surface according the proposed model of heterostructure. However, a longitudinal space shift exists between their lattice space periods. Appearance of the space shift is stipulated by the interface misfit dislocations. The magnitude of the space shift is one of the important characteristics of crystalline layers and substrate interface quality, and can be used for the non-destructive control of device parameters during the growth and fabrication processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G3.1
Copyright
Copyright © Materials Research Society 2003

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References

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