Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices
Articles
- Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches
- https://doi.org/10.1557/PROC-768-G3.14
- Published online: 02 August 2011, G3.14
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- Integration of Porous Silicon with Sol-Gel Derived Ceramic Films
- https://doi.org/10.1557/PROC-768-G3.7
- Published online: 02 August 2011, G3.7
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- Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/RuO2 Thin Films by MOCVD
- https://doi.org/10.1557/PROC-768-G3.8
- Published online: 02 August 2011, G3.8
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- Relaxation of SiGe Films for the Fabrication of Strained Si Devices
- https://doi.org/10.1557/PROC-768-G1.4/D4.4
- Published online: 02 August 2011, G1.4/D4.4
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- Anisotropic Delamination Energy of Bonded Rippled Silicon Surfaces Created by Ar+ Bombardment
- https://doi.org/10.1557/PROC-768-G2.8
- Published online: 02 August 2011, G2.8
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- Determination of Space Shift of Si / SiGe / Si Heterojunction's Cap Layer by Grazing-angle Incidence X-ray Backiffraction Technique
- https://doi.org/10.1557/PROC-768-G3.1
- Published online: 10 February 2011, G3.1
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- Free Standing Silicon as a Compliant Substrate for SiGe
- https://doi.org/10.1557/PROC-768-G1.6/D4.6
- Published online: 02 August 2011, G1.6/D4.6
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- Relaxed SiGe Layers with High Ge Content by Compliant Substrates
- https://doi.org/10.1557/PROC-768-G1.7/D4.7
- Published online: 02 August 2011, G1.7/D4.7
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- Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications
- https://doi.org/10.1557/PROC-768-G3.16
- Published online: 02 August 2011, G3.16
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- Electrical Properties of Bi 3.25 La 0.75 Ti3O12 Thin Films with Various Grain Orientations Deposited by r.f. Magnetron Sputtering
- https://doi.org/10.1557/PROC-768-G3.15
- Published online: 02 August 2011, G3.15
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- Optical and Crystallographic Studies of Ion-Implanted Relaxor Ferroelectric Lead Zinc Niobate for Single-Crystal Layer Transfer
- https://doi.org/10.1557/PROC-768-G4.5
- Published online: 02 August 2011, G4.5
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- Electrical and Structural Characterization of the Interface of Wafer Bonded InP/Si
- https://doi.org/10.1557/PROC-768-G2.4
- Published online: 02 August 2011, G2.4
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- Growth of C60 Fullerene Films on Semiconductor Surfaces
- https://doi.org/10.1557/PROC-768-G3.12
- Published online: 02 August 2011, G3.12
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- Pixel-to-point Transfer: a Process for Integrating Individual GaN-based Light-emitting Devices in o Heterogeneous Microsystems
- https://doi.org/10.1557/PROC-768-G4.8
- Published online: 02 August 2011, G4.8
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- Transmission Electron Miscroscopy Study of the Fused Silicon/Diamond Interface
- https://doi.org/10.1557/PROC-768-G2.9
- Published online: 02 August 2011, G2.9
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- Wafer Fusion ofGaSb to GaAs
- https://doi.org/10.1557/PROC-768-G4.3
- Published online: 02 August 2011, G4.3
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- Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates
- https://doi.org/10.1557/PROC-768-G1.10/D4.10
- Published online: 02 August 2011, G1.10/D4.10
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- CeO2 Thin Films as Buffer Layers for Si/YBCO Integrated Microelectronics
- https://doi.org/10.1557/PROC-768-G3.9
- Published online: 02 August 2011, G3.9
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- Magneto-Optic Materials for Integrated Applications
- https://doi.org/10.1557/PROC-768-G4.6
- Published online: 02 August 2011, G4.6
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- Leakage Current and Dielectric Properties of Ba0.5Sr0.5TiO3 Films Deposited by RF Sputtering at Low Substrate Temperature
- https://doi.org/10.1557/PROC-768-G3.6
- Published online: 02 August 2011, G3.6
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