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Direct Measurement of Electron Drift Parameters using Depth Sensing Single Carrier CdZnTe Detectors

Published online by Cambridge University Press:  10 February 2011

Z. He ,
G. F. Knoll ,
D. K. Wehe  and
Y. F. Du
Z. He
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, U.S.A.
G. F. Knoll
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, U.S.A.
D. K. Wehe
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, U.S.A.
Y. F. Du
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, U.S.A.
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Abstract

This paper describes some novel techniques developed for directly measuring the electron mobility μe and mean free drift time Te in wide band gap semiconductors. These methods are based on a newly-developed digital data analysis system, in conjunction with single carrier charge sensing and depth sensing techniques. Compared with conventional methods, the new techniques are easier to implement, do not involve curve fitting, allow the use of high energy γ-rays and are not sensitive to variations in pulse rise time.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 89
Copyright
Copyright © Materials Research Society 1998

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References

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