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Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

Published online by Cambridge University Press:  15 February 2011

B-Y. Tsaur ,
John C. C. Fan ,
M. W. Geis ,
R. L. Chapman ,
S. R. J. Brueck ,
D. J. Silversmith  and
R. W. Mountain
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
S. R. J. Brueck
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
D. J. Silversmith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

Device-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 593
Copyright
Copyright © Materials Research Society 1983

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References

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