Hostname: page-component-cb9f654ff-fg9bn Total loading time: 0 Render date: 2025-09-10T07:25:28.255Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

Published online by Cambridge University Press:  15 February 2011

B-Y. Tsaur ,
John C. C. Fan ,
M. W. Geis ,
R. L. Chapman ,
S. R. J. Brueck ,
D. J. Silversmith  and
R. W. Mountain
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
S. R. J. Brueck
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
D. J. Silversmith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Get access

Abstract

Device-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 593
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Geis, M. W., Flanders, D. C., and Smith, H. I., Appl. Phys. Lett. 35, 71 (1979).Google Scholar
2. See, for example, Laser and Electron-Beam Interactions with Solids, eds. Appleton, B. R. and Celler, G. K. (North-Holland, New York, 1982).Google Scholar
3.Rathman, D. D., Silversmith, D. J., Burns, J. A., and Bozler, C. O., J. Electrochem. Soc. 127, 501C (1980).Google Scholar
4.Jastrzebski, L., Corboy, J. F., and Pagliaro, R. Jr., Electrochem. Soc. MeetingMontreal, Canada1982, Extended Abs. No. 149.Google Scholar
5.Izumi, K., Doken, M., and Ariyoshi, H., Electron. Lett. 14, 593 (1978).Google Scholar
6.Imai, K., Solid-State Electron. 24, 159 (1981).Google Scholar
7.Maby, E. W., Geis, M. W., Lecoz, L. Y., Silversmith, D. J., Mountain, R. W., and Antoniadis, D. A., IEEE Electron Dev. Lett. EDL–2, 241 (1981).Google Scholar
8.Geis, M. W., Smith, H. I., Tsaur, B-Y., Fan, J. C. C., Maby, E. W., and Antoniadis, D. A., Appl. Phys. Lett. 40, 158 (1982).Google Scholar
9.Fan, J. C. C., Tsaur, B-Y., Chapman, R. L., and Geis, M. W., Appl. Phys. Lett. 41, 186 (1982).Google Scholar
10.Tsaur, B-Y., Fan, J. C. C., Geis, M. W., Silversmith, D. J., and Mountain, R. W., IEEE Electron Dev. Lett. EDL–3, 79 (1982).Google Scholar
11.Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Appl. Phys. Lett. 38, 900 (1981).Google Scholar
12.Ng, K. K., Celler, G. K., Povilonis, E. I., Frye, R. C., Leamy, H. J., and Sze, S. M., Ieee Electron Dev. Lett. EDL–2, 316 (1981).Google Scholar
13.Tsaur, B-Y., Fan, J. C. C., and Geis, M. W., Appl. Phys. Lett. 41, 83 (1982).Google Scholar
14.Tsaur, B-Y., Fan, J. C. C., and Geis, M. W., Appl. Phys. Lett. 40, 322 (1982).Google Scholar
15.Johnson, N. M., Biegelsen, D. K., Tuan, H. C., Moyer, M. D., and Fennell, L. E., IEEE Electron Dev. Lett. (to be published).Google Scholar
16.Tsaur, B-Y., Geis, M. W., Fan, J. C. C., Silversmith, D. J., and Mountain, R. W., Appl. Phys. Lett. 39, 909 (1981).Google Scholar
17.Tsaur, B-Y., Geis, M. W., Fan, J. C. C., Silversmith, D. J., and Mountain, R. W., Laser and Electron-Beam Interactions with Solids, eds. Appleton, B. R. and Celler, G. K. (North-Holland, New York, 1982), p. 585.Google Scholar