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Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

Published online by Cambridge University Press:  21 March 2011

R. Mehandru ,
B.P. Gila ,
J. Kim ,
J.W. Johnson ,
K.P. Lee ,
B. Luo ,
A.H. Onstine ,
C. R. Abernathy ,
S.J. Pearton  and
F. Ren
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
B.P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
J.W. Johnson
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
K.P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
A.H. Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
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Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.47.1
Copyright
Copyright © Materials Research Society 2002

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References

1see for example, the Special Issue on Group III-N Semiconductor Electronics, ed. Mishra, U.K. and Zolper, J.C., IEEE Trans. Electron. Dev. 48, pp. 405–608 (2001).Google Scholar
2 Pearton, S.J., Ren, F., Zhang, A.P. and Lee, K.P., Mat. Sci. Eng. R. 30 55 (2000).10.1016/S0927-796X(00)00028-0Google Scholar
3 Ren, F., Abernathy, C.R., MacKenzie, J.D., Gila, B.P., Pearton, S.J., Hong, M., Marcus, M.A., Schurman, M.J., Baca, A.G., Shul, R.J., Solid State Electronics, 42, 2177 (1998).Google Scholar
4 Alekseev, E., Eisenbach, A., Pavlidis, D., Electronic Letters, 35(24) (1999).Google Scholar
5 Ren, F., Hong, M., Chu, S.N.G., Marcus, M.A., Schurman, M.J., Baca, A., Pearton, S.J., Abernathy, C.R., Applied Physics Letters, 73, 3893 (1998).10.1063/1.122927Google Scholar
6 Hong, M., Ng, H.M., Kwo, J., Kortan, A.R., Baillargeon, J.N., Chu, S.N.G., Mannaerts, J.P., Cho, A.Y., Ren, F., Abernathy, C.R., Pearton, S.J., 197th ElectroChemical Society Meeting, May 2000, Toronto, ON, Canada.Google Scholar
7 Lay, T.S., Hong, M., Kwo, J., Mannaerts, J.P., Hung, W.H. and Huang, D.J., Solid-State Electron. 45 1679 (2001).Google Scholar
8 Johnson, J.W., Gila, B.P., Luo, B., Lee, K.P., Abernathy, C.R., Pearton, S.J., Chyi, J.I., Nee, T.E., Lee, C.M., Chuo, C.C. and Ren, F., J. Electrochem. Soc. 148 G303 (2001).Google Scholar
9 Casey, H.C. Jr, Fountain, G.G., Alley, R.G., Keller, B.P., Denbaars, S.P., Applied Physics Letters, 68, 1850 (1996).Google Scholar
10 Aurlkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., Umeno, M., Applied Physics Letters, 73 (6), 809 (1998).Google Scholar
11 Binari, S.C., Doverspike, K., Kelner, G., Dietrich, H.B., Wickenden, A.E., Solid State Electronics, 41(2)), 177 (1997).Google Scholar
12 Hashizume, T., Alekseev, E., Pavlidis, D., J. Appl. Phys. 88(4)), 1983 (2000)Google Scholar
13 Gila, B.P., Johnson, J.W., Mehandru, R., Luo, B., Onstine, A.H., Allums, K.K., Krishnamoorthy, V., Bates, S., Abernathy, C.R., Ren, F. and Pearton, S.J., pending pub., Oct 2001, Phys. Sol. StatGoogle Scholar
14 Berberich, S., Godignon, P., Locatelli, M.L., Millan, J., Hartnagel, H.L., Solid State Electronics, 42 (6), 915(1998).Google Scholar
15 Nicollian, E. H. and Brews, J. R., MOS Physics and Technology, (John Wiley, New York, 1982), p. 212, 325, 363.Google Scholar
16 Miller, E.J., Dang, X.Z., Wieder, H.H., Asbeck, P.M., Yu, E.T., Sullivan, G.J., J.M. Redwing, 87 (11), 8070 (2000).Google Scholar