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Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates

Published online by Cambridge University Press:  03 September 2012

N. Pala ,
R. Gaska ,
M. Shur ,
J. W Yang  and
M. Asif Khan
N. Pala
Affiliation:
Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
R. Gaska
Affiliation:
Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
M. Shur
Affiliation:
Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
J. W Yang
Affiliation:
Department of ECE, University of South Carolina, Columbia, South Carolina 29208, USA
M. Asif Khan
Affiliation:
Department of ECE, University of South Carolina, Columbia, South Carolina 29208, USA
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Abstract

The low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10−4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.9
Copyright
Copyright © Materials Research Society 1999

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References

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