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Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures

Published online by Cambridge University Press:  03 September 2012

S. Bidnyk ,
J. B. Lam ,
B. D. Little ,
G. H. Gainer ,
Y. H. Kwon ,
J. J. Song ,
G. E. Bulman  and
H. S. Kong
S. Bidnyk
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
J. B. Lam
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
B. D. Little
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
G. H. Gainer
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
Y. H. Kwon
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
G. E. Bulman
Affiliation:
Cree Research, Inc., Durham, NC 27713, U.S.A.
H. S. Kong
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, U.S.A.
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Abstract

We report on an experimental study of microstructure-based lasing in an optically pumped GaN/AlGaN separate confinement heterostructure (SCH). We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. The spacing, directionality, and far-field patterns of the lasing modes are shown to be the result of microcavities that were naturally formed in the structures due to strain relaxation. The temperature sensitivity of the lasing wavelength was found to be twice as low as that of bulk-like GaN films. Based on these results, we discuss possibilities for the development of ultra-violet laser diodes with increased temperature stability of the emission wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.22
Copyright
Copyright © Materials Research Society 1999

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