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Nanocharacterization of Texture and Hillock Formation in Thin Al And Al-0.2%Cu Films for Thin-Film Transistors

Published online by Cambridge University Press:  10 February 2011

H. Takatsuji ,
S. Tsuji ,
H. Kitahara ,
K. Tsujimoto ,
K. Kuroda  and
H Saka
H. Takatsuji
Affiliation:
IBM Japan Ltd., Display Technology, Yasu-cho, Yasu-gun, Shiga 520-23, Japan
S. Tsuji
Affiliation:
IBM Japan Ltd., Display Technology, Yamato-shi, Kanagawa 242, Japan
H. Kitahara
Affiliation:
IBM Japan Ltd., Display Technology, Yasu-cho, Yasu-gun, Shiga 520-23, Japan
K. Tsujimoto
Affiliation:
ITES Co., Yasu-cho, Yasu-gun, Shiga 520-23, Japan
K. Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
H Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
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Abstract

The relation between the nanostructure of pure Al and Al-0.2 wt.% Cu thin films on glass substrates and anti-stress migration properties were investigated. These films were deposited on liquid-crystal display (LCD) grade glass substrate (550 x 650 mm) by means of two types of dc magnetron multi-chamber sputtering apparatus.

We developed the nanoindentation techniques to accelerate the characterization time for stress migration test. By AFM and cross-sectional TEM observations, we found an unusual three-layer structure in a Al-Cu thin film with strong anti-stress migration property.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 415
Copyright
Copyright © Materials Research Society 1997

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