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Optical and Structural Properties of Mn-Implanted GaN Films

Published online by Cambridge University Press:  21 March 2011

J. Xu ,
J. Li ,
R. Zhang ,
X.Q. Xiu ,
D.Q. Lu ,
S.L. Gu ,
B. Shen ,
Y. Shi  and
Y. D. Zheng
J. Xu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
J. Li
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
X.Q. Xiu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
D.Q. Lu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
S.L. Gu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Y. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Y. D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
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Abstract

The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The structure analysis revealed that the Mn doped sample has good crystal quality as the pure GaN after annealed. And further discussions on the role of Mn in GaN: Mn films have been presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.43.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

rzhang@nju.edu.cn

References

1. Henini, M., Magnetic Semiconductors, III-Vs Review, 13, 32, (2000).Google Scholar
2. Furdyna, J. K., Kossut, J. (Eds.), Semiconductor and Semimetals, Vol 25, Academic, New York, (1988).Google Scholar
3. Ohno, H., Journal of Magnetism and Magnetic Materials, 200, 110, (1999)Google Scholar
4. Munekata, H., Ohno, H., Molnar, S. von, Segmuller, A., Chang, L. L., Esaki, L., Phys. Rev. Lett., 63, 1849, (1989).Google Scholar
5. Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Iye, Y., Appl. Phys. Lett., 69, 363, (1996).Google Scholar
6. Hayashi, T., Tanaka, M., Nishinaga, T., Shimada, H., Tsuchiya, H., Otuka, Y., J. Crystal Growth, 175/176, 1063, (1997).Google Scholar
7. Dietl, T., Ohno, H., Matsukura, F., J. Cibert, Ferrand, D., Science, 287, 1019, (2000).Google Scholar
8. Korotkov, R. Y., Gegie, J. M., Wessels, B. W., MRS. Symp., 639, (2001).Google Scholar
9. Kuwabara, S., Ishii, K., Haneda, S., Kondo, T., Munekata, H., Physica E, 10, 233, (2001).Google Scholar