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Passive components on AlN for application in AlGaN/GaN power amplifiers

Published online by Cambridge University Press:  21 March 2011

B. Jacobs ,
B. Van Straaten ,
M. Kramer ,
F. Karouta ,
P. De Hek ,
E. Suijker  and
R. Van Dijk
B. Jacobs
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
B. Van Straaten
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
M. Kramer
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
F. Karouta
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering, Opto-electronic devices group, PO box 513, NL-5600 MB, Eindhoven, The Netherlands
P. De Hek
Affiliation:
TNO Physics and Electronics Laboratory, 2509 JG, The Hague, The Netherlands
E. Suijker
Affiliation:
TNO Physics and Electronics Laboratory, 2509 JG, The Hague, The Netherlands
R. Van Dijk
Affiliation:
TNO Physics and Electronics Laboratory, 2509 JG, The Hague, The Netherlands
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Abstract

We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitors and resistors were measured and modelled. These elements are embedded between two adaptors for RF probing. A technique was developed to de-embed the adaptors from the overall measurement and hence correctly determine the properties of the element itself. Measurements on elements containing multiple ports with right angles can best be carried out using standard calibration techniques followed by carefully reorienting the probes. It is shown that for accurate design of matching networks operating at 10 GHz each element has to be carefully modelled. The method presented in this paper can be a useful contribution tackling some of the problems related to the design of these networks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.1.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Pantoja, R.R., “Improved Calibration and Measurement of the S-parameters of Microwave ICs”, IEEE Microwave Theory and Techniques, Vol. 37, pp.1675–1680, 1989 Google Scholar
2. Marks, R.B. and Williams, D.F., “Characteristic impedance determination using propagation constant measurement”, IEEE Microwave Guided Wave Letters, Vol. 1, pp. 141–143, June 1991.Google Scholar
3. Pozar, D.M., “Microwave Engineering”, 1990 ISBN 0-201-50418-9Google Scholar
4. Heinrich, W., “Quasi-TEM description of MMIC coplanar lines including conductor-loss effects”, IEEE transactions on microwave theory and techniques, Vol. 41, no. 1, pp. 45–52.Google Scholar