Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T18:35:43.379Z Has data issue: false hasContentIssue false
  • English
  • Français

Process Development and Integration of Piezoelectric Aluminum Nitride Thin-Film for RF MEMS Applications

Published online by Cambridge University Press:  11 February 2011

Rajnish K. Sharma ,
Jiang Ning ,
Feng Hanhua  and
R. Gopalakrishnan
Rajnish K. Sharma
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
Jiang Ning
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
Feng Hanhua
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
R. Gopalakrishnan
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore-117685, e-mail: sharma@ime.a-star.edu.sg; Fax: 65–6777–0670
Get access

Abstract

The aluminum nitride (AlN) process was successfully developed for as high frequency thin-film for bulk acoustic resonator applications. Columnar AlN was deposited on p-type (100) silicon substrate at 300–500°C using pulse direct current (DC) sputtering technique. Argon to nitrogen ratio was optimized to achieve stoichiometry at higher deposition rates of about 1000 Å/min at 1–4 kW DC power. The XRD of as-deposited and annealed AlN film shows preferred (002) orientations. The dry etching process was developed and etching rate about 3200 Å/min was achieved using Cl based chemistry. Film composition analysis was done using AES technique and stoichiometry was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 741: Symposium J – Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines , 2002 , J5.43
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Walter, V., Delobelle, P., LeMoal, P., Joseph, E. and Callet, M., Sensors and actuators A, Vol. 96 (2002) 157–166.Google Scholar
2. Tanaka, K., Kubota, T. and Sakabe, Y., Sensors and Actuators a, Vol. 96 (2002) 179–183.Google Scholar
3. Bumble, B., LeDuce, H. G. and Megerian, K.G., IEEE Trans. of Applied Superconductivity, Vol. 11, No. 1 (2001) 76.Google Scholar
4. Wang, Z., Kawakami, A., Saito, A. and Hamasaki, K., IEEE Trans. of Applied Superconductivity, Vol. 11, No. 1 (2001) 84.Google Scholar
5. Fujioka, H., Ohta, J., Soga, K., Maeno, K., Takahashi, H., Acosta, A. and Oshima, M., IWGI, Tokyo, 2001, 162.Google Scholar
6. Berit, F., Malec, D., Lebey, T. and Agnel, S., Annual Report on Electrical Insulation and Dielectric Phenomena, 2001, 71.Google Scholar
7. Adam, T., Kolodzey, J., Swann, C.P., Tsao, M.W. and Rabolt, J.F., Applied Surface Science, 175–176 (2001) 428–435.Google Scholar
8. Fang, Z.Y., Rong, G., Newman, N. and Smith, D.J., Applied Physics Letters, 76, 14 (2000) 1839–1841.Google Scholar
9. Liu, H. and Rogers, J.W., J. of Vac. Sci. Technology, A 17, 2 (1999) 325–331.Google Scholar
10. Auner, G.W., Jin, F., Niak, V.M. and Niak, R., Journal of Applied Physics, 85, 11 (1999) 7879–7883.Google Scholar
11. Engelmark, F., iriarte, G.F. and Katardjiev, I.V., J. of Vac. Sci. Technology, B 20, No. 3 (2002) 843–848.Google Scholar
12. Walter, V., Delobelle, P., LeMoal, P., Joseph, E. and Callet, M., Sensors and actuators A, Vol. 96 (2002) 157–166.Google Scholar
13. Tanaka, K., Kubota, T. and Sakabe, Y., Sensors and Actuators a, Vol. 96 (2002) 179–183.Google Scholar
14. Aardahl, C.L., Rogers, J.W. Jr, Yun, H.K., Ono, Y., Tweet, D.J. and Hsu, S.T., Thin Solid Film 346 (1999) 174–180.Google Scholar
15. Hori, T., Gate dielectrics and MOS ULSIs, Principles, Technologies and Applications, Springer Series in Electronics and Photonics, Vol. 34, 1997.Google Scholar