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Scanning Eectron Beam Annealing of Oxygen Donors in Czochralski Silicon

Published online by Cambridge University Press:  15 February 2011

C J Pollard ,
J D Speight  and
K G Barraclough
C J Pollard
Affiliation:
British Telecom Research Labs, Martlesham Heath, Suffolk, England
J D Speight
Affiliation:
British Telecom Research Labs, Martlesham Heath, Suffolk, England
K G Barraclough
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire, England
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Abstract

The destruction of the oxygen donor complex in Czochralski silicon has been studied using scanning electron beam annealing in the range 550°C to 1050° C for 5s to 1000s. A two stage annealing schedule ensured a rapid rise to the target temperature and overscanning provided a uniform, non-distorting heating field. Four point probe and spreading resistance measurements showed a very rapid donor destruction rate above 650° C; between 550° C and 650°C the lower donor destruction rate allowed a study of the annealing behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 413
Copyright
Copyright © Materials Research Society 1983

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References

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