Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T10:51:28.439Z Has data issue: false hasContentIssue false
  • English
  • Français

Use Of A Capillary X-Ray Focused Beam To Investigate The Chemical Composition Of CdZnTe Wafers With High Resolution CdZnTe Detectors

Published online by Cambridge University Press:  10 February 2011

P. Fougères ,
Ch. Burggraf ,
Chr. Burggraf ,
J. M. Koebel ,
C. Koenig ,
R. Regal ,
M. Hage-Ali ,
A. Krauth  and
P. Siffert
P. Fougères
Affiliation:
EURORAD, CTT du CNRS, BP 20, 67037 Strasbourg Cedex 2, France
Ch. Burggraf
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
Chr. Burggraf
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
J. M. Koebel
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
C. Koenig
Affiliation:
University Louis Pasteur, IUT, 3 rue St Paul, 67300 Schiltigheim, France
R. Regal
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
M. Hage-Ali
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
A. Krauth
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
P. Siffert
Affiliation:
CNRS, Laboratoire PHASE (UPR 292 du CNRS), BP 20, 67037 Strasbourg Cedex 2, France
Get access

Abstract

The control of the concentration of Zn and its fluctuation in the high pressure Bridgman grown CdZnTe crystals is part of our characterization work on the ternary grown ingots grown in house. In order to reach both high sensitivity and high position resolution, we have developed a new system consisting of a X-ray generator, coupled to a focusing X-ray capillary, delivering intense beams in the micron scale, since the intensity gain is around a factor of 100 compared to conventional methods.

The characteristic X-rays are measured through a high resolution CdZnTe detector (225 eV at 5.9 keV FWHM) cooled by a Peltier system. The results of our investigations on different kinds of crystals will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 95
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tanaka, A., Masa, Y., Seto, S., Kawaski, T., J. Crystal Growth 94, 166 (1989).Google Scholar
2. Scyoc, J.M. Van, Lund, J.C., Morse, D.H., Antolak, A.J., Olsen, R.W., James, R.B., Schieber, M., Yoon, H., Goorsky, M.S., Toney, J.E., Schlessinger, T.E., J. Electronic Materials 25, 1323 (1996).Google Scholar
3. Toney, J.E., Brunett, B.A., Schlesinger, T.E., Van Scyoc, J.M., James, R.B., Schieber, M., Goorsky, M., Yoon, H., Eissler, E., Johnson, C., Nucl. Instr. & Methods A380, 132 (1996).Google Scholar
4. Toney, J.E. Brunett, B.A., Schlesinger, T.E., James, R.B., IEEE Trans. Nucl. Sci. 44, 1684 (1997).Google Scholar
5. Johnson, C.J., Eissler, E.E., Cameron, S.E., Kong, Y., Fan, S., Jovanovic, S., Lynn, K.G., Mat. Res.Soc. Symp. Proc. 302, Pittsburgh, PA, 1993, p. 463.Google Scholar
6. Fougères, P. Hage-Ali, M., Koebel, J.M., Siffert, P., Hassan, S., Lusson, A., Triboulet, R., Marrakchi, G., Zerrai, A., Charkaoui, K., Adhiri, R., Brémond, G., Kaitasov, O., Raoult, M.O., Creston, J., presented at the Conference on II-VI compound semiconductors, Grenoble, France (1997). To be published in J. of Crystal Growth.Google Scholar