Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions
Research Article
Systematic Examination of Boron Diffusion Phenomenon in HfSiON High-k Gate Insulator
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- 28 July 2011, D7.9
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Tunable Workfunction with TaN Metal Gate on HfO2-HfxSiyO Dielectrics
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- 28 July 2011, D4.3
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Carrier transport of extended and localized states in InGaO3(ZnO)5
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- 17 March 2011, E2.9
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Atomic Vapour Deposition (AVD™) Process for High Performance HfO22 Dielectric Layers
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- 28 July 2011, D9.8
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Electrical breakdown in a two-layer dielectric in the MOS structure
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- 28 July 2011, D2.8
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Effect of different annealing procedures on the microstructure and the electrical properties of CSD derived (Ba,Sr)TiO3 thin films.
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- 28 July 2011, D3.30
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Interval Annealing During Alternating Pulse Deposition
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- 28 July 2011, D1.3
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