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1.2 kW all-fiber narrow-linewidth picosecond MOPA system

Published online by Cambridge University Press:  23 March 2023

Jiexi Zuo
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Haijuan Yu
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shuzhen Zou
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Zhiyong Dong
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Chaojian He
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shuang Xu
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Chaoyu Ning
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xuechun Chen
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xinyao Li
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xuechun Lin*
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
*
Correspondence to: Xuechun Lin, Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qing Hua East Road, Beijing 100083, China. Email: xclin@semi.ac.cn

Abstract

Achieving an all-fiber ultra-fast system with above kW average power and mJ pulse energy is extremely challenging. This paper demonstrated a picosecond monolithic master oscillator power amplifier system at a 25 MHz repetition frequency with an average power of approximately 1.2 kW, a pulse energy of approximately 48 μJ and a peak power of approximately 0.45 MW. The nonlinear effects were suppressed by adopting a dispersion stretched seed pulse (with a narrow linewidth of 0.052 nm) and a multi-mode master amplifier with an extra-large mode area; then an ultimate narrow bandwidth of 1.32 nm and a moderately broadened pulse of approximately 107 ps were achieved. Meanwhile, the great spatio-temporal stability was verified experimentally, and no sign of transverse mode instability appeared even at the maximum output power. The system has shown great power and energy capability with a sacrificed beam propagation product of 5.28 mm$\cdot$mrad. In addition, further scaling of the peak power and pulse energy can be achieved by employing a lower repetition and a conventional compressor.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 The general layout of the MOPA system: SESAM, semiconductor saturable absorber mirror; LD, laser diode at 976 nm; WDM, 980/1060 wavelength division multiplexer; YSF, ytterbium-doped single-mode fiber; FBG, fiber Bragg grating; ISO, isolator; BP, bandpass filter; LMA, large mode-field area; CPS, cladding pump stripper; XLMA, extra-large mode area; DM, dichroic mirror.

Figure 1

Figure 2 Measurement results of the seed: (a) spectral width in the logarithmic scale (with a resolution of 0.02 nm); (inset) snapshot of pulse train; (b) trace of intensity autocorrelation; (c) spectrum of pre-amplified signal: after and (inset) before the BPF2.

Figure 2

Figure 3 (a) Experimentally observed spectral evolution with different pumping currents; (b) typical spectral evolution of an unchirped pulse under SPM; (c) signal bandwidth of seed and after amplification; (d) autocorrelation trace of the ultimate pulse.

Figure 3

Figure 4 (a) Raman content versus pump current of the first booster amplifier; (inset) global spectrum under 6 A pump measured at ISO4; (b) output power versus pump of the second booster amplifier; (c) spectrum at 1220 W output measured at the end of the XLMA.

Figure 4

Figure 5 Output stability of the system. (a) With a full collimated beam captured by a charge-coupled device (CCD); (inset) sampling spot selected by pinhole; (b) Fourier transform of the temporal trace; (c) power stability within 1 hour.