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Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

Published online by Cambridge University Press:  01 May 2006

Hiroyuki Uchiyama ,
Takeshi Kikawa ,
Takafumi Taniguchi  and
Takashi Shiota
Hiroyuki Uchiyama*
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
Takeshi Kikawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
Takafumi Taniguchi
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
Takashi Shiota
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
*
a) Address all correspondence to this author. e-mail: h-uchiya@crl.hitachi.co.jp
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Abstract

To investigate the effect of plasma-incorporated fluorine on Si donors in pseudomorphic-high electron mobility transistors (P-HEMTs), we used x-ray photoemission spectroscopy to analyze three layers near the Si δ-doped layer and the Si δ-doped layer itself, in which we previously found fluorine accumulation after post-thermal annealing following fluorocarbon-based plasma exposure. For this evaluation, we developed controllable and low-speed AlGaAs wet-chemical etching using citric-acid-based wet etchant. We used it to expose one of the layers to be analyzed: one 7.5 nm above the Si δ-doped layer, one 1.5 nm above it, the δ-doped layer itself, and one 1.5 nm below it. We found that the accumulated fluorine localized in the δ-doped layer and reacted with Si donors. This is apparently the main reason for the carrier passivation in the fluorocarbon-based plasma-exposed P-HEMTs.

Keywords

Reactive ion etchingSemiconductorX-ray photoelectron spectroscopy (XPS)

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Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 5 , May 2006 , pp. 1331 - 1335
Copyright
Copyright © Materials Research Society 2006

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References

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