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A transmission electron microscopy investigation of sulfide nanocrystals formed by ion implantation

Published online by Cambridge University Press:  31 January 2011

A. Meldrum ,
E. Sonder ,
R. A. Zuhr ,
I. M. Anderson ,
J. D. Budai ,
C. W. White ,
L. A. Boatner  and
D. O. Henderson
A. Meldrum
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
E. Sonder
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
R. A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
I. M. Anderson
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
L. A. Boatner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
D. O. Henderson
Affiliation:
Fisk University, Department of Physics, Nashville, Tennessee 37208
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Abstract

Ion implantation was used to form compound semiconductor nanocrystal precipitates of ZnS, CdS, and PbS in both glass and crystalline matrices. The precipitate microstructures and size distributions were investigated by cross-sectional transmission electron microscopy techniques. Several unusual features were observed, including strongly depth-dependent size variations of the ZnS precipitates and central void features in the CdS nanocrystals. The morphology and crystal structure of the nanocrystal precipitates could be controlled by selection of the host material. The size distribution and microstructural complexity were significantly reduced by implanting a low concentration of ions into a noncrystalline host, and by using multi-energy implants to give a flat concentration profile of the implanted elements.

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Articles
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Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4489 - 4502
Copyright
Copyright © Materials Research Society 1999

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