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Behavioral modeling of RF power amplifiers using a time-domain characterization approach

Published online by Cambridge University Press:  04 April 2025

J. Ortali Open the ORCID record for J. Ortali [Opens in a new window] ,
S. Mons ,
T. Reveyrand ,
E. Ngoya  and
C. Mazière
J. Ortali*
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
S. Mons
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
T. Reveyrand
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
E. Ngoya
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
C. Mazière
Affiliation:
AMCAD ENGINEERING, 20 rue d’Atlantis, Limoges, France
*
Corresponding author: J. Ortali; Email: jean.ortali@xlim.fr
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Abstract

In this article, we discuss the behavioral modeling of the power amplifier (PA) for system-level simulations through its most advanced approach, named TPM model, based on a simplification of the Volterra series following the method of separation of the low and high frequency memory effects present in PA. The model, relying on frequency domain CW characterization of the PA, shows a limitation when applied to high-power radar applications, for which this article investigates an alternate solution based on time-domain pulsed RF characterization.

Keywords

Behavioral modelingcomputer-aided designpower amplifiers

Information

Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 17 , Special Issue 6: JNM 2024 , July 2025 , pp. 942 - 949
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Copyright
© The Author(s), 2025. Published by Cambridge University Press in association with The European Microwave Association.

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Footnotes

The article has been updated since original publication. A notice detailing the change has also been published

References

Wood, J and Root, D (2005) Fundamentals of Nonlinear Behavioral Modeling for RF and Microwave Design. Artech House Publishers.Google Scholar
Wood, J, LeFevre, M, Runton, D, Nanan, JC, Noori, BH and Aaen, PH (2006) Envelope-domain time series (ET) behavioral model of a Doherty RF power amplifier for system design. IEEE Transactions on Microwave Theory and Techniques 54(8), 3163–3172.CrossRefGoogle Scholar
Pedro, JC, Carvalho, NB and Lavrador, PM (2003) Modeling nonlinear behavior of band-pass memoryless and dynamic systems. IEEE MTT-S International Microwave Symposium. Philadelphia.Google Scholar
Roblin, P, Root, D, Verspecht, J, Ko, Y and Teyssier, JP (2012) New trends for the nonlinear measurement and modeling of high-power RF transistors and amplifiers with memory effects. IEEE Transactions on Microwave Theory and Techniques 60, 1964–1978.CrossRefGoogle Scholar
Amcad Engineering: VISION 2.4. Available at: https://url.uk.m.mimecastprotect.com/s/WeMgCZVOOs53PNO3tKioUB6aFV?domain=amcad-engineering.comsoftware/vision/.Google Scholar
Ngoya, E, Quindroit, C and Nébus, JM (2009) On the continuous-time model for nonlinear-memory modeling of RF power amplifiers. IEEE Transactions on Microwave Theory and Techniques 57, 3278–3292.CrossRefGoogle Scholar
Gapillout, D, Mazière, C, Ngoya, E and Mons, S (2015) A reliable methodology for experimental extraction of power amplifier dynamic volterra model. IEEE Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC). Taormina.CrossRefGoogle Scholar
Soury, A, Ngoya, E and Nébus, JM (2002) A new behavioral model taking into account nonlinear memory effects and transient behaviors in wideband SSPAs. IEEE MTT-S International Microwave Symposium. Seattle.Google Scholar
Mazière, C, Soury, A, Ngoya, E and Nébus, JM (2005) A system level model of solid state amplifiers with memory based on a nonlinear feedback loop principle. European Microwave Conference. Paris.CrossRefGoogle Scholar
Verspecht, J, Horn, J, Betts, L, Gunyan, D, Pollard, R, Gillease, C and Root, D (2009) Extension of X-Parameters to Include Long-Term Dynamic Memory Effects. Boston: IEEE MTT-S International Microwave Symposium.CrossRefGoogle Scholar
Gustavsen, B and Semlyen, A (1999) Rational approximation of frequency domain responses by vector fitting. IEEE Transactions on Power Delivery 14, 1052–1061.CrossRefGoogle Scholar
Grivet-Talocia, S (2004) The time-domain vector fitting algorithm for linear macromodeling. AEU - International Journal of Electronics and Communications 58, 293–295.CrossRefGoogle Scholar
Ngoya, E and Mons, S (2014) A summary of time-domain behavioral modeling of RF and microwave subsystems. IEEE Microwave Magazine 15, 91–105.CrossRefGoogle Scholar