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Plasticity-induced oxidation reactivity on Ni(100) studied by scanning tunneling spectroscopy – CORRIGENDUM

Published online by Cambridge University Press:  04 November 2011

F.W. Herbert ,
K.J. Van Vliet  and
B. Yildiz

Abstract

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Information

Type
Corrigendum
Information
MRS Communications , Volume 2 , Issue 1 , March 2012 , pp. 29
Copyright
Copyright © Materials Research Society 2011

Figure 2 as published is missing an axis label.

The corrected Figure 2 appears below.

Figure 2.

(a) In situ electronic structure characterization of the Ni(100) surface upon STM tip-induced plasticity. Differential tunneling conductance measurements, dI/dV, obtained both at dislocation steps (solid curve) and away from dislocations (dashed curve). Each curve is the average of over 100 point spectra from three different indentations. The error in dI/dV measured by standard deviation is ±18%, represented by dashed enveloping curves. Schematic density of state diagrams illustrate how an increase in DOS around E F can be interpreted as an up-shift in the Ni d-band center from (b) ɛ dflat at the undamaged surface to (c) ɛ ddisl at dislocations (after [14]).

References

Herbert, F.W., Van Vliet, K.J., and Yildiz, B.: Plasticity-induced oxidation reactivity on Ni(100) studied by scanning tunneling spectroscopy. MRS Communications, doi: 10.1557/mrc.2011.17, Published online 14 October 2011.Google Scholar
Figure 0

Figure 2. (a) In situ electronic structure characterization of the Ni(100) surface upon STM tip-induced plasticity. Differential tunneling conductance measurements, dI/dV, obtained both at dislocation steps (solid curve) and away from dislocations (dashed curve). Each curve is the average of over 100 point spectra from three different indentations. The error in dI/dV measured by standard deviation is ±18%, represented by dashed enveloping curves. Schematic density of state diagrams illustrate how an increase in DOS around EF can be interpreted as an up-shift in the Ni d-band center from (b) ɛdflat at the undamaged surface to (c) ɛddisl at dislocations (after [14]).