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Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation

Published online by Cambridge University Press:  17 January 2020

Xin Jia ,
Jun-jun Wei ,
Yabo Huang ,
Siwu Shao ,
Kang An ,
Yuechan Kong ,
Lishu Wu ,
Zhina Qi ,
Jinlong Liu  and
Liangxian Chen
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Xin Jia
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Jun-jun Wei*
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Yabo Huang
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Siwu Shao
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Kang An
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Yuechan Kong
Affiliation:
Nanjing Electronic Devices Institute, China Electronic Technology Group Corporation, Nanjing 210016, China
Lishu Wu
Affiliation:
Nanjing Electronic Devices Institute, China Electronic Technology Group Corporation, Nanjing 210016, China
Zhina Qi
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Jinlong Liu
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Liangxian Chen
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
Chengming Li
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
*
a)Address all correspondence to this author. e-mail: weijj@ustb.edu.cn
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Abstract

The development of GaN-on-diamond devices offers bright prospects for the creation of high-power density electronics. This article presents a process of fabricating GaN-on-diamond structure by depositing diamond films on dual sides, including heat dissipation diamond film and sacrificial carrier diamond film. Prior to heat dissipation diamond film layer preparation, aluminum nitride (AlN) is chosen as a dielectric layer and pretreated by nanodiamond (ND) particles, to enhance the nucleation density. Zeta potential measurements and X-ray photoelectron spectroscopy are used to analyze the AlN surface after each treatment. The results show that oxygen-terminated ND particles tend to adhere to an AlN surface because the oxygen-terminated NDs have –COOH and –OH groups, and hold a negative potential. On the contrary, fluorine-terminated AlN prefers to attract the hydrogen-terminated ND seeds, which resulted in higher diamond nucleation density. Based on this preliminary study, a dense high-quality GaN-on-diamond wafer is successfully produced by using AlN as the dielectric layer and a diamond film as the sacrificial carrier.

Keywords

diamondIII–Vnucleation & growth

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Footnotes

b)

This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/editor-manuscripts/.

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