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Optical rectification in 4H-SiC: paving the way to generate strong terahertz fields with ultra-wide bandwidth

Published online by Cambridge University Press:  20 June 2023

Fangjie Li
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Kai Zhong*
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Yiwen Zhang
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Tong Wu
Affiliation:
School of Marine Science and Technology, Tianjin University, Tianjin, China
Yuxin Liu
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Hongzhan Qiao
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Jining Li
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Degang Xu
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
Jianquan Yao
Affiliation:
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, China Key Laboratory of Opto-electronic Information Technology, Ministry of Education (Tianjin University), Tianjin, China
*
Correspondence to: Kai Zhong, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China. Email: zhongkai@tju.edu.cn

Abstract

The 4H-SiC crystal is found to have great potential in terahertz generation via nonlinear optical frequency conversion due to its extremely high optical damage threshold, wide transparent range, etc. In this paper, optical rectification (OR) with tilted-pulse-front (TPF) setting based on the 4H-SiC crystal is proposed. The theory accounts for the optimization of incident pulse pre-chirping in the TPF OR process under high-intensity femtosecond laser pumping. Compared with the currently recognized LiNbO3-based TPF OR, which generates a single-cycle terahertz pulse within 3 THz, 4H-SiC demonstrates a significant advantage in producing ultra-widely tunable (up to over 14 THz, TPF angle 31°–38°) terahertz waves with high efficiency (~10–2) and strong field (~MV/cm). Besides, the spectrum characteristics, as well as the evolution from single- to multi-cycle terahertz pulses can be modulated flexibly by pre-chirping. The simulation results show that 4H-SiC enables terahertz frequency extending to an unprecedent range by OR, which has extremely important potential in strong-field terahertz applications.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (https://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 Comparison of terahertz output and pump evolution in LiNbO3 and 4H-SiC crystals without pre-chirping. (a) Conversion efficiencies of terahertz generation versus propagation distance L along the z direction. (b) Terahertz spectra |ATHz|2 in the linear scale at the optimal L in (a), multiplied by 1, 10–2 and 10–1, respectively. (c), (d) The corresponding pump evolution processes influenced by cascading and SPM effects, including depletion, widening and frequency shift compared with the input pump. In (d), low- and high-intensity input pumps are normalized to distinguish their difference more clearly.

Figure 1

Table 1 Input parameters for analyzing TPF OR in LiNbO3 and 4H-SiC crystals.

Figure 2

Figure 2 TPF OR conversion efficiency (color scale) along the propagation distance L for various GDD values at six TPF angles from 31° to 38°. The white curves represent the maximum efficiency (ηmax) obtained by optimizing the GDD at each L. Areas I, II and III indicate different OR efficiencies affected by GDD, defined as excessive, insufficient and suitable pre-chirping, respectively.

Figure 3

Figure 3 Terahertz spectrum intensity |ATHz|2 (color scale) as a function of GDD at six TPF angles from 31° (a) to 38° (f), when L = 4 mm. The white curves indicate the conversion efficiency regulated by GDD.

Figure 4

Figure 4 Spectrum tuning of TPF OR in 4H-SiC. (a) Terahertz spectrum intensity |ATHz|2 at six TPF angles under optimal GDD when L = 4 mm. (b) Shift of peak frequency versus TPF angle. The black line is calculated by the PM condition cosγ = ng/nT, while the red line is simulated by the 1D model.

Figure 5

Figure 5 The evolution of terahertz spectrum intensity |ATHz|2 (color scale) along the propagation distance L at six TPF angles, under optimal GDD and at L = 4 mm. The white curve indicates the conversion efficiency as a function of L.

Figure 6

Figure 6 The evolution of the terahertz spectrum ((a) and (c)) and temporal waveform ((b) and (d)) with L at two different conditions: (a), (b) γ = 31.5°, GDD = 4200 fs2; (c), (d) γ = 33°, GDD = 5050 fs2. The former forms only one continuous terahertz pulse throughout the crystal, while the latter forms two independent pulses.

Figure 7

Figure 7 Modulation of the terahertz spectra (a) and temporal waveform (b) by varying pre-chirping when γ = 32° and L = 4 mm. Different terahertz spectra (flat-top broadband, efficient and concentrated, split and widened) and temporal waveforms (single- to multi-cycle pulses) can be flexibly tuned by varying the GDD.

Figure 8

Figure 8 Terahertz spectrum ((a) and (c)) and temporal waveform ((b) and (d)) at different TPF angles (γ = 31° and γ = 38°) and pre-chirping (GDD = 800, 4000 and 8000 fs2) at the corresponding optimal L. The insets in (d) show the initially established terahertz signal when the pre-chirped pump pulse enters the crystal.