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Multilayer circular substrate-integrated waveguide cavity band-pass filters with ultrawide stopband characteristics

Published online by Cambridge University Press:  30 September 2024

Amrita Medda
Affiliation:
Aerospace Engineering Department, Indian Institute of Technology, Kharagpur, India
Amit Ranjan Azad
Affiliation:
Electronics and Communication Engineering Department, Indian Institute of Information Technology, Kalyani, India
Akhilesh Mohan*
Affiliation:
Electronics and Communication Engineering Department, Indian Institute of Technology, Roorkee, India
Manoranjan Sinha
Affiliation:
Aerospace Engineering Department, Indian Institute of Technology, Kharagpur, India
*
Corresponding author: Akhilesh Mohan; Email: am@ece.iitkgp.ernet.in
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Abstract

This paper presents a methodology to design band-pass filters having ultrawide stopband characteristics using multilayer circular substrate-integrated waveguide (SIW) cavities. The orthogonal microstrip feedlines are used as input and output ports that are present at the top and bottom layers, while the middle layers are used to couple the SIW cavities. Higher-order spurious modes of the circular SIW cavity are suppressed by using orthogonal feeding mechanism and properly adjusting the arc-shaped slots between the cavities. To validate the present approach, two filters (second- and fourth-order) have been designed and fabricated and their characteristics are measured. The second-order filter exhibits a stopband rejection below 25 dB up to nearly 5.07f0, while the fourth-order filter has a stopband characteristic of nearly 5.05f0 with 20 dB rejection. The filters allow only TM010 mode propagation and attenuate the higher-order spurious modes of the cavity.

Information

Type
Filters
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© Akhilesh Mohan, 2023. Published by Cambridge University Press in association with the European Microwave Association
Figure 0

Figure 1. The front view and 3D view of circular SIW cavity.

Figure 1

Figure 2. Simulated electric field distributions of first 17 resonant modes of circular SIW cavity (radius of the cavity = 11 mm).

Figure 2

Figure 3. The configuration of the proposed second-order circular SIW cavity filter.

Figure 3

Figure 4. (a) The coupling factor k against variation in θ and (b) external quality factor Qe against variation in ds.

Figure 4

Figure 5. The simulated and measured S-parameters of Filter I.

Figure 5

Figure 6. A photograph of the fabricated Filter I.

Figure 6

Figure 7. The configuration of the proposed fourth-order circular SIW cavity filter.

Figure 7

Figure 8. The simulated and measured S-parameters of Filter II.

Figure 8

Figure 9. A photograph of fabricated Filter II.

Figure 9

Table 1. Comparison of the proposed work with reported works