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Barrierless Cu–Ni–Nb thin films on silicon with high thermal stability and low electrical resistivity

Published online by Cambridge University Press:  20 December 2013

Xiao Na Li ,
Li Rong Zhao ,
Zhen Li ,
Li Jun Liu ,
Cui Min Bao ,
Jinn P. Chu  and
Chuang Dong
Xiao Na Li*
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
Li Rong Zhao
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
Zhen Li*
Affiliation:
School of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China
Li Jun Liu
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
Cui Min Bao
Affiliation:
Shenyang Blower Works Group, Ltd., Shenyang 110142, China
Jinn P. Chu
Affiliation:
Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Chuang Dong
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
*
a)Address all correspondence to this author. e-mail: lixiaona@dlut.edu.cn
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Abstract

In this paper, we demonstrate a thin film Cu–Ni–Nb alloy deposited directly on silicon, without a designated barrier, showing very high thermal stability at a temperature up to 700 °C for 1 h. Thin [Nb–Ni12]Cux films were sputter deposited and annealed, and their material and electrical properties were studied. The results can be explained by the “cluster-plus-glue atom” model for stable solid solutions, where [Nb–Ni12] cuboctahedral clusters are embedded in a Cu matrix. In this model, the clusters are congruent with the Cu minimizing atomic interactions allowing a good stability. The properties of the films were found to be affected by the Ni/Nb ratios. Especially, the (Nb1.2/13.2Ni12/13.2)0.3Cu99.7 film annealed at 500 °C for 1 h had the lowest electrical resistivity of about 2.7 μΩ cm. And even after 40 h annealing at 500 °C, it maintained a low resistivity of about 2.8 μΩ cm, demonstrating extremely high stabilities against silicide formation.

Keywords

Cufilmelectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 24 , 28 December 2013 , pp. 3367 - 3373
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Liu, C.S. and Chen, L.J.: Effects of substrate cleaning and film thickness on the epitaxial growth of ultrahigh vacuum deposited Cu thin films on (001)Si. J. Appl. Phys. 74, 5501 (1993).CrossRefGoogle Scholar
Chu, J.P., Lin, C.H., and John, V.S.: Cu films containing insoluble Ru and RuN on barrierless Si for excellent property improvements. Appl. Phys. Lett. 91, 132109 (2007).CrossRefGoogle Scholar
Chu, J.P. and Lin, C.H.: Thermal stability of Cu(W) and Cu(Mo) films for advanced barrierless Cu metallization: Effects of annealing time. J. Electron. Mater. 35, 1933 (2006).CrossRefGoogle Scholar
Zhou, J.B., Gustafsson, T., and Garfunkel, E.: The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111). Surf. Sci. 372, 21 (1997).CrossRefGoogle Scholar
Chu, J.P., Yu, T.Y., Wu, C.H., Lin, C.H., Wang, S.F., and Chen, Q.: Ultrathin diffusion barrier for copper metallization: A thermally stable amorphous rare-earth scandate. J. Electrochem. Soc. 157, H384 (2010).CrossRefGoogle Scholar
Changa, S-Y., Li, C-E., Chiang, S-C., and Huang, Y-C.: 4-nm thick multilayer structure of multi-component (AlCrRuTaTiZr)Nx as robust diffusion barrier for Cu interconnects. J. Alloys Compd. 515, 4 (2012).CrossRefGoogle Scholar
Wang, Y., Hung, C., Lee, W., Chang, S., and Wang, Y.: Under-layer behavior study of low resistance Ta/TaNx barrier film. Thin Solid Films 516, 5241 (2008).CrossRefGoogle Scholar
Tsai, D-C., Huang, Y-L., Lin, S-R., Jung, d-R., Chang, S-Y., Chang, Z-C., Deng, M-J., and Shieu, F-S.: Characteristics of a 10 nm-thick (TiVCr)N multi-component diffusion barrier layer with high diffusion resistance for Cu interconnects. Surf. Coat. Technol. 205, 5064 (2011).CrossRefGoogle Scholar
Kohn, A., Eizenberg, M., and Shacham-Diamand, Y: Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization. Microelectron. Eng. 55, 297 (2001).CrossRefGoogle Scholar
Wang, X.J., Dong, X.P., and Jiang, C.H.: Thermal performance of sputtered Cu films containing insoluble Zr and Cr for advanced barrierless Cu metallization. Trans. Nonferrous Met. Soc. China 20, 217 (2010).CrossRefGoogle Scholar
Kwak, M.Y., Shin, D.H., Kang, T.W., and Kim, K.N.: Characteristics of TiN barrier layer against Cu diffusion. Thin Solid Films 339, 290 (1999).CrossRefGoogle Scholar
Lin, C.H., Chu, J.P., Mahalingam, T., Lin, T.N., and Wang, S.F.: Sputtered copper films with insoluble Mo for Cu metallization: A thermal annealing study. J. Electron. Mater. 32, 1235 (2003).CrossRefGoogle Scholar
Mahalingam, T., Lin, C.H., Wang, L.T., and Chu, J.P.: Preparation and characterization of sputtered Cu films containing insoluble Nb. Mater. Chem. Phys. 100, 490 (2006).CrossRefGoogle Scholar
Zhang, J., Wang, Q., Wang, Y.M., Li, C.Y., Wen, L.S., and Dong, C.: Revelation of solid solubility limit Fe/Ni = 1/12 in corrosion resistant Cu-Ni alloys and relevant cluster model. J. Mater. Res. 25, 328 (2010).CrossRefGoogle Scholar
Dong, C., Wang, Q., Qiang, J.B., Wang, Y.M., Jiang, N., Han, G., Li, Y.H., Wu, J., and Xia, J.H.: From clusters to phase diagrams: Composition rules of quasicrystals and bulk metallic glasses. J. Phys. D: Appl. Phys. 40, R273 (2007).CrossRefGoogle Scholar
Li, X.N., Liu, L.J., Zhang, X.Y., Chu, J.P., Wang, Q., and Dong, C.: Barrierless Cu-Ni-Mo interconnect films with high thermal stability against silicide formation. J. Electron. Mater. 41, 3447 (2012).CrossRefGoogle Scholar
Nie, L.F., Li, X.N., Chu, J.P., Wang, Q., Lin, C.H., and Dong, C.: High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si. Appl. Phys. Lett. 96, 182105 (2010).CrossRefGoogle Scholar
Tian, M.B. and Liu, L.D.: Science and Technology of Thin Film, 1st ed. (Machinery Industry Press, Beijing, 1991).Google Scholar
Barmak, K., Gungor, A., Cabral, C. Jr., and Harper, J.M.E.: Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity. J. Appl. Phys. 94, 1605 (2003).CrossRefGoogle Scholar
Barmak, K., Cabral, C. Jr., Harper, J.M.E., and Rodbell, K.P.: On the use of alloying elements for Cu interconnect applications. J. Vac. Sci. Technol., B. 24, 2485 (2006).CrossRefGoogle Scholar
Shacham-Diamand, Y., Dedhia, A., Hoffstetter, D., and Oldham, W.G.: Copper transport in thermal SiO2. J. Electrochem. Soc. 140, 2427 (1993).CrossRefGoogle Scholar