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Reversible multilevel resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures

Published online by Cambridge University Press:  31 January 2011

Dashan Shang
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Lidong Chen*
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Qun Wang
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Zihua Wu
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Wenqing Zhang
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Xiaomin Li
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
*
b) Address all correspondence to this author. e-mail: cld@mail.sic.ac.cn
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Abstract

The electric-pulse–induced resistance switching of the Ag–La0.7Ca03MnO3(LCMO)–Pt heterostructures was studied. The multilevel resistance switching (MLRS), in which several resistance states can be obtained, was observed in the switching from high to low resistance state (HRS → LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS → HRS) shows unobvious MLRS. According to the resistance switching behavior in serial and parallel modes, MLRS was explained by the parallel effect of multifilament forming/rupture in the Ag–LCMO interface layer. The present results suggest a possible application of Ag–LCMO–Pt heterostructures as multilevel memory devices.

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Type
Outstanding Symposium Papers
Copyright
Copyright © Materials Research Society 2007

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